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參數(shù)資料
型號(hào): ADP3412JR
廠商: ANALOG DEVICES INC
元件分類: MOSFETs
英文描述: Secondary Over-Voltage Protection for 2-4 cell in series Li-Ion/Poly (4.35V) 8-SM8 -40 to 110
中文描述: BUF OR INV BASED MOSFET DRIVER, PDSO8
封裝: SOIC-8
文件頁數(shù): 2/8頁
文件大小: 135K
代理商: ADP3412JR
–2–
REV. 0
ADP3412–SPECIFICATIONS
1
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
SUPPLY
Supply Voltage Range
Quiescent Current
VCC
ICC
Q
4.15
5.0
1
7.5
2
V
mA
PWM INPUT
Input Voltage High
2
Input Voltage Low
2
2.0
V
V
0.8
HIGH-SIDE DRIVER
Output Resistance, Sourcing Current
Output Resistance, Sinking Current
Transition Times
3
(See Figure 2)
Propagation Delay
3, 4
(See Figure 2)
V
BST
V
SW
= 4.6 V
V
BST
V
SW
= 4.6 V
V
BST
V
SW
= 4.6 V, C
LOAD
= 3 nF
V
BST
V
SW
= 4.6 V
V
BST
V
SW
= 4.6 V
2.5
2.5
20
20
5
5
35
Note 5
25
ns
ns
ns
tr
DRVH
, tf
DRVH
tpdh
DRVH
tpdl
DRVH
10
LOW-SIDE DRIVER
Output Resistance, Sourcing Current
Output Resistance, Sinking Current
Transition Times
3
(See Figure 2)
Propagation Delay
3, 4
(See Figure 2)
VCC = 4.6 V
VCC = 4.6 V
VCC = 4.6 V, C
LOAD
= 3 nF
VCC = 4.6 V
VCC = 4.6 V
2.5
2.5
20
5
5
35
30
25
ns
ns
ns
tr
DRVL
, tf
DRVL
tpdh
DRVL
tpdl
DRVL
NOTES
1
All limits at temperature extremes are guaranteed via correlation using standard Statistical Quality Control (SQC) methods.
2
Logic inputs meet typical CMOS I/O conditions for source/sink current (~1
μ
A).
3
AC specifications are guaranteed by characterization, but not production tested.
4
For propagation delays,
tpdh
refers to the specified signal going high;
tpdl
refers to it going low.
5
Maximum propagation delay = 40 ns + (1 ns/pF
C
DLY
).
Specifications subject to change without notice.
(T
A
= 0 C to 70 C, VCC = 5 V, BST = 4 V to 26 V, unless otherwise noted.)
ABSOLUTE MAXIMUM RATINGS
*
VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.3 V to +8 V
BST . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.3 V to +30 V
BST to SW . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.3 V to +8 V
SW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5.0 V to +25 V
IN . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.3 V to VCC + 0.3 V
Operating Ambient Temperature Range . . . . . . . 0
°
C to 70
°
C
Operating Junction Temperature Range . . . . . . 0
°
C to 125
°
C
θ
JA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155
°
C/W
θ
JC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
°
C/W
Storage Temperature Range . . . . . . . . . . . .
65
°
C to +150
°
C
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . . 300
°
C
*
This is a stress rating only; operation beyond these limits can cause the device to
be permanently damaged. Unless otherwise specified, all voltages are referenced
to PGND.
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