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參數資料
型號: ADP3522
廠商: Analog Devices, Inc.
元件分類: 基準電壓源/電流源
英文描述: GSM Power Management System
中文描述: 手機電源管理系統
文件頁數: 2/20頁
文件大小: 467K
代理商: ADP3522
REV. 0
–2–
ADP3522–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
1
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
SHUTDOWN SUPPLY CURRENT
VBAT
2.5 V
(Deep Discharged Lockout Active)
2.5 V < VBAT
3.2 V
(UVLO Active)
VBAT > 3.2 V
ICC
VBAT = VBAT2 = 2.3 V
15
40
μ
A
VBAT = VBAT2 = 3.0 V
30
55
μ
A
VBAT = VBAT2 = 4.0 V
45
80
μ
A
OPERATING GROUND CURRENT
VSIM, VCORE, VMEM, VRTC On
All LDOs On
All LDOs On
IGND
VBAT = 3.6 V
Minimum Loads
Minimum Loads
Maximum Loads
225
345
1.0
300
450
3.0
μ
A
μ
A
% of Max
Load
UVLO ON THRESHOLD
VUVLO
Rising Edge
3.2
3.3
V
UVLO HYSTERESIS
200
mV
DEEP DISCHARGED LOCKOUT ON
THRESHOLD
VDDLO
Falling Edge
2.4
2.75
V
DEEP DISCHARGED LOCKOUT
HYSTERESIS
100
mV
INPUT HIGH VOLTAGE
PWRONIN
TCXOEN, SIMEN,
CHGEN
, GATEIN, SIMVSEL
V
IH
1.0
1.5
V
V
INPUT LOW VOLTAGE
(PWRONIN, TCXOEN, SIMEN,
CHGEN
, SIMVSEL)
V
IL
0.3
V
PWRONIN Pin Pull-Down Resistor
R
PD
I
IH
200
1000
5000
k
μ
A
INPUT HIGH BIAS CURRENT
(TCXOEN, SIMEN,
CHGEN
,
SIMVSEL )
1.0
INPUT LOW BIAS CURRENT
(PWRONIN, TCXOEN, SIMEN,
CHGEN
, SIMVSEL)
I
IL
–1.0
μ
A
PWRONKEY
INPUT HIGH VOLTAGE
V
IH
V
IL
0.7 VBAT
V
PWRONKEY
INPUT LOW VOLTAGE
0.3
VBAT
V
PWRONKEY
INPUT PULL-UP
RESISTANCE TO VBAT
70
100
130
k
THERMAL SHUTDOWN
THRESHOLD
2
160
oC
THERMAL SHUTDOWN
HYSTERESIS
45
oC
(–20 C < T
< +85 C, VBAT = VBAT2 = 3 V–5.5 V, CVSIM = CVCORE = CVAN =
CVMEM = 2.2 F, VTCXO = 0.22 F, CVRTC = 0.1 F, CVBAT = 10 F, minimum
loads applied on all outputs, unless otherwise noted.)
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