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參數資料
型號: ADR430
廠商: Analog Devices, Inc.
英文描述: Ultralow Noise XFET Voltage References with Current Sink and Source Capability
中文描述: 超低噪聲XFET電壓基準與電流吸入和源能力
文件頁數: 7/24頁
文件大小: 868K
代理商: ADR430
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
ADR435 ELECTRICAL CHARACTERISTICS
V
IN
= 7 V to 18 V, I
LOAD
= 0 mA, T
A
= 25°C, unless otherwise noted.
Table 6.
Parameter
Output Voltage
B Grade
A Grade
Initial Accuracy
B Grade
B Grade
A Grade
A Grade
Temperature Coefficient
SOIC-8 (B Grade)
SOIC-8 (A Grade)
MSOP-8
Line Regulation
Load Regulation
Quiescent Current
Voltage Noise
Voltage Noise Density
Turn-On Settling Time
Long-Term Stability
1
Output Voltage Hysteresis
Ripple Rejection Ratio
Short Circuit to GND
Supply Voltage Operating Range
Supply Voltage Headroom
Rev. B | Page 7 of 24
Symbol
V
O
V
O
V
OERR
V
OERR
V
OERR
V
OERR
TCV
O
V
O
/VIN
V
O
/I
LOAD
I
IN
e
N
p-p
e
N
t
R
V
O
V
O_HYS
RRR
I
SC
V
IN
V
IN
V
O
Conditions
40°C < T
A
< +125°C
40°C < T
A
< +125°C
40°C < T
A
< +125°C
V
IN
= 7 V to 18 V
40°C < T
A
< +125°C
I
LOAD
= 0 mA to 10 mA, V
IN
= 8 V
40°C < T
A
< +125°C
I
LOAD
= 10 mA to 0 mA, V
IN
= 8 V
40°C < T
A
< +125°C
No load, 40°C < T
A
< +125°C
0.1 Hz to 10 Hz
1 kHz
C
IN
= 0
1,000 h
f
IN
= 10 kHz
Min
4.998
4.994
7
2
Typ
5.000
5.000
1
2
2
5
620
8
115
10
40
20
70
40
Max
5.002
5.006
2
0.04
6
0.12
3
10
10
20
15
15
800
18
Unit
V
V
mV
%
mV
%
ppm/°C
ppm/°C
ppm/°C
ppm/V
ppm/mA
ppm/mA
μA
μV p-p
nV/√Hz
μs
ppm
ppm
dB
mA
V
V
1
The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.
相關PDF資料
PDF描述
ADR430A Ultralow Noise XFET Voltage References with Current Sink and Source Capability
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ADR431A Ultralow Noise XFET Voltage References with Current Sink and Source Capability
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