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參數資料
型號: ADR433ARM
廠商: ANALOG DEVICES INC
元件分類: 基準電壓源/電流源
英文描述: Ultralow Noise XFET Voltage References with Current Sink and Source Capability
中文描述: 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 3 V, PDSO8
封裝: MO-187AA, MSOP-8
文件頁數: 17/24頁
文件大?。?/td> 868K
代理商: ADR433ARM
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
Rev. B | Page 17 of 24
+V
DD
V
REF
GND
4
V
IN
V
OUT
ADR43x
A1
V
DD
A1 = OP777, OP193
2
6
0
Figure 33. Negative Reference
HIGH VOLTAGE FLOATING CURRENT SOURCE
The circuit in Figure 34 can be used to generate a floating
current source with minimal self-heating. This particular
configuration can operate on high supply voltages determined
by the breakdown voltage of the N-channel JFET.
V
IN
V
OUT
GND
OP90
+V
S
SST111
VISHAY
2N3904
R
2.1k
–V
S
ADR43x
0
Figure 34. High Voltage Floating Current Source
KELVIN CONNECTIONS
In many portable instrumentation applications where PC board
cost and area go hand-in-hand, circuit interconnects are very
often of dimensionally minimum width. These narrow lines can
cause large voltage drops if the voltage reference is required to
provide load currents to various functions. In fact, a circuit’s
interconnects can exhibit a typical line resistance of 0.45 m/
square (1 oz. Cu, for example). Force and sense connections,
also referred to as Kelvin connections, offer a convenient
method of eliminating the effects of voltage drops in circuit
wires. Load currents flowing through wiring resistance produce
an error (V
ERROR
= R × I
L
) at the load. However, the Kelvin
connection of Figure 35 overcomes the problem by including
the wiring resistance within the forcing loop of the op amp.
Because the op amp senses the load voltage, the op amp loop
control forces the output to compensate for the wiring error and
to produce the correct voltage at the load.
V
IN
V
OUT
GND
4
R
LW
R
L
V
SENSE
V
FORCE
R
LW
V
IN
2
6
ADR43x
A1 = OP191
A1
0
+
Figure 35. Advantage of Kelvin Connection
DUAL POLARITY REFERENCES
Dual polarity references can easily be made with an op amp and
a pair of resistors. In order not to defeat the accuracy obtained
by ADR43x, it is imperative to match the resistance tolerance as
well as the temperature coefficient of all the components.
6
2
V
IN
4
5
10V
V
IN
V
OUT
GND
TRIM
R1
R2
10k
V–
R3
5k
V+
+10V
–5V
+5V
1
μ
F
0.1
μ
F
U1
ADR435
OP1177
10k
0
Figure 36. +5 V and 5 V References Using ADR435
6
2
4
5
V
IN
V
OUT
GND
TRIM
R1
5.6k
U2
V–
V+
+10V
U1
ADR435
OP1177
+2.5V
–2.5V
R2
5.6k
0
–10V
Figure 37. +2.5 V and 2.5 V References Using ADR435
相關PDF資料
PDF描述
ADR433ARM-REEL7 Ultralow Noise XFET Voltage References with Current Sink and Source Capability
ADR433B Ultralow Noise XFET Voltage References with Current Sink and Source Capability
ADR433BR Ultralow Noise XFET Voltage References with Current Sink and Source Capability
ADR434 Ultralow Noise XFET Voltage References with Current Sink and Source Capability
ADR431BR-REEL7 Ultralow Noise XFET Voltage References with Current Sink and Source Capability
相關代理商/技術參數
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