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參數資料
| 型號： | ADR435 |
| 廠商： | Analog Devices, Inc. |
| 元件分類： | 基準電壓源/電流源 |
| 英文描述： | Ultralow Noise XFET Voltage References with Current Sink and Source Capability |
| 中文描述： | 超低噪聲XFET電壓基準與電流吸入和源能力 |
| 文件頁數： | 4/24頁 |
| 文件大小： | 868K |
| 代理商： | ADR435 |
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
ADR431 ELECTRICAL CHARACTERISTICS
V
IN
= 4.5 V to 18 V, I
LOAD
= 0 mA, T
A
= 25°C, unless otherwise noted.
Table 3.
Parameter
Output Voltage
B Grade
A Grade
Initial Accuracy
B Grade
B Grade
A Grade
A Grade
Temperature Coefficient
SOIC-8 (B Grade)
SOIC-8 (A Grade)
MSOP-8
Line Regulation
Rev. B | Page 4 of 24
Symbol
V
O
V
O
V
OERR
V
OERR
V
OERR
V
OERR
TCV
O
TCV
O
TCV
O
V
O
/V
IN
Conditions
40°C < T
A
< +125°C
40°C < T
A
< +125°C
40°C < T
A
< +125°C
V
IN
= 4.5 V to 18 V
40°C < T
A
< +125°C
Min
2.499
2.497
Typ
2.500
2.500
1
2
2
5
Max
2.501
2.503
1
0.04
3
0.13
3
10
10
20
Unit
V
V
mV
%
mV
%
ppm/°C
ppm/°C
ppm/°C
ppm/V
Load Regulation
V
O
/I
LOAD
I
LOAD
= 0 mA to 10 mA, V
IN
= 5.0 V
Quiescent Current
Voltage Noise
Voltage Noise Density
Turn-On Settling Time
Long-Term Stability
1
Output Voltage Hysteresis
Ripple Rejection Ratio
Short Circuit to GND
Supply Voltage Operating Range
Supply Voltage Headroom
I
IN
e
N
p-p
e
N
t
R
V
O
V
O_HYS
RRR
I
SC
V
IN
V
IN
– V
O
40°C < T
A
< +125°C
I
LOAD
= 10 mA to 0 mA, V
IN
= 5.0 V
40°C < T
A
< +125°C
No load, 40°C < T
A
< +125°C
0.1 Hz to 10.0 Hz
1 kHz
C
IN
= 0
1,000 h
f
IN
= 10 kHz
4.5
2
580
3.5
80
10
40
20
70
40
15
15
800
18
ppm/mA
ppm/mA
μA
μV p-p
nV√Hz
μs
ppm
ppm
dB
mA
V
V
1
The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.
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