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參數資料
| 型號： | AFM04P3-000 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
| 封裝： | DIE-4 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 15K |
| 代理商： | AFM04P3-000 |
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
1
Specifications subject to change without notice. 6/99A
Low Noise/Medium Power
GaAs MESFET Chip
Features
s 21 dBm Output Power @ 18 GHz
s High Associated Gain, 9 dB @ 18 GHz
s High Power Added Efficiency, 25%
s Broadband Operation, DC–26 GHz
s 0.25
m Ti/Pd/Au Gates
s Passivated Surface
Chip Layout
Description
The AFM04P3-000 is a high performance power GaAs
MESFET chip having a gate length of 0.25
m and a total
gate periphery of 400
m. The device has excellent gain
and power performance through 26 GHz, making it
suitable for a wide range of commercial and military
applications in oscillator and amplifier circuits. The device
employs Ti/Pd/Au gate metallization and surface
passivation to ensure a rugged, reliable part.
AFM04P3-000
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Saturated Drain Current (IDSS)
VDS = 2 V, VGS = 0 V
90.0
140.0
190.0
mA
Transconductance (gm)
60.0
80.0
mS
Pinch-off Voltage (VP)
VDS = 5 V, IDS = 1 mA
1.0
3.0
5.0
-V
Gate to Drain
IGD = -400 A
8.0
12.0
-V
Breakdown Voltage (Vbgd)
Noise Figure (NF)
0.6
dB
Associated Gain (GA)
VDS = 2 V, IDS = 25 mA, F = 4 GHz
13.8
dB
Output Power at 1 dB
21.0
dBm
Compression (P1 dB)
Gain at 1 dB Compression (G1 dB)
VDS = 5 V, IDS = 70 mA, F = 18 GHz
9.0
dB
Power Added Efficiency (
ηadd)
25.0
%
Thermal Resistance (
ΘJC)
TBASE = 25°C
250.0
°C/W
Electrical Specifications at 25°C
Characteristic
Value
Drain to Source Voltage (VDS)
6 V
Gate to Source Voltage (VGS)
-4 V
Drain Current (IDS)
IDSS
Gate Current (IGS)
1 mA
Total Power Dissipation (PT)
700 mW
Storage Temperature (TST)
-65 to +150°C
Channel Temperature (TCH)
175°C
Absolute Maximum Ratings
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