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參數(shù)資料
| 型號(hào)： | AFM04P3-212 |
| 廠商： | Alpha Industries, Inc. |
| 英文描述： | Low Noise/Medium Power GaAs MESFET Chips |
| 中文描述： | 低噪聲/中等功率GaAs MESFET芯片 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 25K |
| 代理商： | AFM04P3-212 |
Alpha Industries, Inc.
[781] 935-5150
Fax
[617] 824-4579
Email
sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 6/99A
1
Low Noise/Medium Power
GaAs MESFET Chips
Features
I
Low Noise Figure, 0.6 dB @ 4 GHz
I
20 dBm Output Power @ 18 GHz
I
High Associated Gain, 13 dB @ 4 GHz
I
High Power Added Efficiency, 25%
I
Broadband Operation, DC–26 GHz
I
Available in Tape and Reel Packaging
Description
The AFM04P3-212, 213 are high performance power
GaAs MESFET chips having a gate length of 0.25
μ
m and
a total gate periphery of 400
μ
m. These devices have
excellent gain and power performance through 26 GHz,
making them suitable for a wide range of commercial and
military applications in oscillator and amplifier circuits.They
also have excellent noise performance and can be used
in the first and second stage of low noise amplifier design.
The AFM04P3 employs Ti/Pd/Au gate metallization and
surface passivation to ensure a rugged, reliable part.
AFM04P3-212, AFM04P3-213
Parameter
Test Conditions
Min.
90.0
60.0
1.0
8.0
Typ.
140.0
80.0
3.0
12.0
Max.
190.0
Unit
mA
mS
-V
-V
Saturated Drain Current (I
DSS
)
Transconductance (gm)
Pinch-Off Voltage (V
P
)
Gate to Drain Breakdown
Voltage (V
bgd
)
Noise Figure (NF)
Associated Gain (G
A
)
Output Power at 1 dB
Compression (P
1 dB
)
Gain at 1 dB Compression (G
1 dB
)
Power Added Efficiency (
η
add)
V
DS
= 2 V, V
GS
= 0 V
V
DS
= 5 V, I
DS
= 1 mA
I
GD
= -400
μ
A
5.0
0.6
13.8
20.0
dB
dB
dBm
V
DS
= 2 V, I
DS
= 25 mA, F = 4 GHz
V
DS
= 5 V, I
DS
= 70 mA, F = 18 GHz
9.0
25.0
dB
%
Electrical Specifications at 25°C
Source
Gate
Source
Drain
Drain
Source
Gate
Source
212
213
Characteristic
Value
Drain to Source Voltage (V
DS
)
Gate to Source Voltage (V
GS
)
Drain Current (I
DS
)
Gate Current (I
GS
)
Total Power Dissipation (P
T
)
Storage Temperature (T
ST
)
Channel Temperature (T
CH
)
6 V
-4 V
I
DSS
1 mA
700 mW
-65 to +150°C
175°C
Absolute Maximum Ratings
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AFM04P3-213 | Low Noise/Medium Power GaAs MESFET Chips |
| AFM04P3-000 | Low Noise/Medium Power GaAs MESFET Chip |
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| AFM06P3-212 | Ka Band Power GaAs MESFET Chips |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AFM04P3-213 | 制造商:ALPHA 制造商全稱:ALPHA 功能描述:Low Noise/Medium Power GaAs MESFET Chips |
| AFM061230400 | 制造商:JSP 功能描述:SCREEN FACE POLYCARBONATE 8" 制造商:JSP 功能描述:SCREEN, FACE, POLYCARBONATE, 8" 制造商:JSP 功能描述:SCREEN, FACE, POLYCARBONATE, 8"; Faceshield / Visor Material:Polycarbonate; Safety Category:EN166.1.B.3.9; Frame Colour:Black; Lens Colour:Clear; Type:Faceshield ;RoHS Compliant: NA |
| AFM06P2-000 | 制造商:ALPHA 制造商全稱:ALPHA 功能描述:Ka Band Power GaAs MESFET Chip |
| AFM06P2-212 | 制造商:SKYWORKS 制造商全稱:SKYWORKS 功能描述:Ka Band Power GaAs MESFET |
| AFM06P3-212 | 制造商:ALPHA 制造商全稱:ALPHA 功能描述:Ka Band Power GaAs MESFET Chips |
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