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參數資料
| 型號： | AFS3-00100200-09-CR-4 |
| 廠商： | MITEQ INC |
| 元件分類： | 放大器 |
| 英文描述： | 100 MHz - 2000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | HERMETIC SEALED PACKAGE |
| 文件頁數： | 1/1頁 |
| 文件大小： | 45K |
| 代理商： | AFS3-00100200-09-CR-4 |
100 Davids Drive, Hauppauge, NY 11788
TEL.: (631) 439-9220 FAX: (631) 436-7430
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7
CRYOGENIC AMPLIFIERS
AFS SERIES
FREQUENCY
GAIN
NOISE VSWR OUTPUT POWER NOM. DC
MODEL
RANGE
GAIN FLATNESS FIGURE IN/OUT @ 1 dB COMP. POWER OUTLINE
NUMBER
(GHz) (dB, Min.) (±dB, Max.) (dB, Max.) (Max.) (dBm, Min.) (+6 V, mA) DRAWING
AFS3-00100200-09-CR-4
0.1–2
38
1
0.9
2:1
5
100
4
(Nominal specs. @ 77 K)
0.1–2
42
0.75
0.25
1.5:1/1.8:1
5
100
4
AFS3-01000200-06-CR-6
1–2
38
1
0.6
2:1
5
100
6
(Nominal specs. @ 77 K)
1–2
40
1
0.20
1.8:1
5
100
6
AFS3-02000400-08-CR-4
2–4
28
1
0.8
2:1
5
75
4
(Nominal specs. @ 77 K)
2–4
33
0.5
0.25
1.8:1/1.5:1
5
75
4
AFS3-04000800-09-CR-4
4–8
31
0.5
0.8
2:1
5
100
4
(Nominal specs. @ 77 K)
4–8
33
0.5
0.2
1.5:1
5
100
4
AFS4-08001200-10-CR-4
8–12
32
1
0.9
2:1
5
100
4
(Nominal specs. @ 77 K)
8–12
34
0.75
0.35
1.5:1
5
100
4
AFS4-12001800-16-CR-4
12–18
30
1.5
1.8
2:1
5
75
4
(Nominal specs. @ 77 K)
12–18
35
1.5
1.3
2:1
10
75
4
NOTES:
The above specifications listed at 77 K were taken on several typical amplifiers.
Please contact the factory for actual temperature data.
Lower gain and other bands also available.
See page 59 for outline.
In addition to our standard low-noise amplifiers,
MITEQ can support your needs for amplifiers that
operate in cryogenic environments. MITEQ has sup-
plied units cooled to liquid nitrogen temperatures
(77 K), as well as units operating at helium (4 K) tem-
peratures. These units utilize our extremely low-noise
amplifier designs, which are packaged in hermetically
sealed kovar housings.
Due to the fact that silicon-based products do not
work well under cryogenic conditions, we have
removed the internal voltage regulator and reverse
protect diode. As such, the amplifiers can operate at
much lower voltages, thus significantly reducing the
total power dissipated by the devices within the ampli-
fier.
.1
.5
1
1.5
2
.1
.5
1
1.5
2
43
41
39
FREQUENCY (GHz)
1
.8
.6
.4
.2
FREQUENCY (GHz)
NOISE FIGURE (dB)
GAIN (dB)
+23
°C
77 K
AFS3-00100200-09-CR-4 TYPICAL DATA
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| AFS3-00100800-14-S-4 | 100 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| AFS2-00101400-28-5P-2 | 100 MHz - 14000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| AFS2-00100100-09-10P-2 | 100 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AFS303.825E | 功能描述:信號調節 303.825MHz RoHS:否 制造商:EPCOS 產品:Duplexers 頻率:782 MHz, 751 MHz 頻率范圍: 電壓額定值: 帶寬: 阻抗:50 Ohms 端接類型:SMD/SMT 封裝 / 箱體:2.5 mm x 2 mm 工作溫度范圍:- 30 C to + 85 C 封裝:Reel |
| AFS303.825N01-SE | 功能描述:信號調節 303.825MHz RoHS:否 制造商:EPCOS 產品:Duplexers 頻率:782 MHz, 751 MHz 頻率范圍: 電壓額定值: 帶寬: 阻抗:50 Ohms 端接類型:SMD/SMT 封裝 / 箱體:2.5 mm x 2 mm 工作溫度范圍:- 30 C to + 85 C 封裝:Reel |
| AFS303.875N01-SE | 功能描述:信號調節 303.875MHz RoHS:否 制造商:EPCOS 產品:Duplexers 頻率:782 MHz, 751 MHz 頻率范圍: 電壓額定值: 帶寬: 阻抗:50 Ohms 端接類型:SMD/SMT 封裝 / 箱體:2.5 mm x 2 mm 工作溫度范圍:- 30 C to + 85 C 封裝:Reel |
| AFS304.0W02-TE | 功能描述:信號調節 304MHz RoHS:否 制造商:EPCOS 產品:Duplexers 頻率:782 MHz, 751 MHz 頻率范圍: 電壓額定值: 帶寬: 阻抗:50 Ohms 端接類型:SMD/SMT 封裝 / 箱體:2.5 mm x 2 mm 工作溫度范圍:- 30 C to + 85 C 封裝:Reel |
| AFS304.0W03-ND01 | 功能描述:信號調節 304MHz RoHS:否 制造商:EPCOS 產品:Duplexers 頻率:782 MHz, 751 MHz 頻率范圍: 電壓額定值: 帶寬: 阻抗:50 Ohms 端接類型:SMD/SMT 封裝 / 箱體:2.5 mm x 2 mm 工作溫度范圍:- 30 C to + 85 C 封裝:Reel |
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