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參數(shù)資料
| 型號： | AG103-G |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 放大器 |
| 英文描述： | 50 MHz - 870 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | GREEN, TO-243C, SOT-89, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 158K |
| 代理商： | AG103-G |
Specifications and information are subject to change without notice.
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com
Page 1 of 4
June 2006
AG103
High Dynamic Range Gain Block
Product Information
Product Features
50 – 870 MHz
13 dB Gain
3 dB Noise Figure
>+36 dBm OIP3
+20 dBm P1dB
Single +5 Bias Supply
Internally matched to 50
Lead-free/Green/RoHS-
compliant
SOT-89 Package
MTTF > 1000 years
Applications
Mobile Infrastructure
CATV / DBS
Defense / Homeland Security
NMT-450 Infrastructure
Product Description
The AG103 is a general-purpose gain block that offers good
dynamic range and low noise figure in a low-cost surface-
mount package. The combination of high OIP3 and tight
gain variation window makes it attractive for a multitude of
applications. The device combines dependable performance
with superb quality to maintain MTTF values exceeding
1000 years at mounting temperatures of +85 °C and is
available in the environmentally-friendly lead-free/green
/RoHS-compliant SOT-89 package. All devices are 100%
RF & DC tested.
The AG103 uses a high reliability GaAs MMIC technology
and only requires DC-blocking and bypass capacitors, and
an inductive RF choke for operation.
Internal matching
provides a 50 ohm input / output impedance minimizing the
number of required external components.
The AG103 GaAs MMIC amplifier is well suited for
wireless infrastructure such as NMT-450, homeland
security, and 2
nd generation mobile infrastructure utilizing
the cellular band. In addition, the amplifier can be used for
applications in various IF frequency bands.
Functional Diagram
RF IN
GND
RF OUT
GND
1
2
3
4
Function
Pin No.
Input
1
Output/Bias
3
Ground
2, 4
Specifications
(1)
Parameter
Units
Min
Typ
Max
Comment
Operational Bandwidth
MHz
50
870
Test Frequency
MHz
800
Gain
dB
12
12.9
14
Input Return Loss
dB
10
See note 2
Output Return Loss
dB
20
Output P1dB
dBm
+20
Output IP3
dBm
+33
>+36
Pout = +5 dBm/tone, 10 MHz spacing.
Noise Figure
dB
2.9
See note 2
Operating Current Range
mA
120
150
180
Supply Voltage
V
+5
1. Test conditions unless otherwise noted: T = 25 C, 50 system.
2. S11 and Noise Figure can be improved using an optional input matching network (typically just a series inductor).
Absolute Maximum Rating
Parameter
Rating
Operating Case Temperature
-40 to +85 °C
Storage Temperature
-55 to +150 °C
DC Voltage
+6 V
RF Input Power (continuous)
+10 dBm
Junction Temperature
+220 °C
Operation of this device above any of these parameters may cause permanent damage.
Ordering Information
Part No.
Description
AG103-G
GaAs MMIC Gain Block
(lead-free/green/RoHS-compliant SOT-89 Pkg)
AG103-PCB
200 – 600 MHz Fully Assembled Application Circuit
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