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參數資料
| 型號： | AG12D |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon Rectifier Cells with polysiloxan passivation |
| 中文描述： | 12 A, 200 V, SILICON, RECTIFIER DIODE |
| 封裝： | ROHS COMPLIANT PACKAGE-2 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 103K |
| 代理商： | AG12D |
1
) Max. temperature of the terminals T
T
= 100 C – Max. Temperatur der Kontaktflchen T
T
= 100 C
400
28.02.2002
AG 12A … AG 12M
Silicon Rectifier Cells
with polysiloxan passivation
Silizium-Gleichrichterzellen
mit Polysiloxan-Passivierung
Nominal current – Nennstrom
12 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
50…1000 V
Weight approx. – Gewicht ca.
0.3 g
Dimensions / Mae in mm
Standard packaging bulk
Standard Lieferform lose
Maximum ratings and Characteristics
Kenn- und Grenzwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
V
RRM
[V]
50
100
200
400
600
800
1000
Surge peak reverse voltage
Stospitzensperrspannung
V
RSM
[V]
80
130
250
450
700
1000
1300
AG 12A
AG 12B
AG 12D
AG 12G
AG 12J
AG 12K
AG 12M
Max. forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
T
T
= 100 C
I
FAV
12 A
1
)
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
I
FRM
60 A
1
)
Peak forward surge current, 50 Hz half sine-wave
Stostrom für eine 50 Hz Sinus-Halbwelle
T
A
= 25 C
I
FSM
500 A
Rating for fusing – Grenzlastintegral, t < 10 ms
T
A
= 25 C
i
2
t
1250 A
2
s
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
T
j
T
S
– 50...+150 C
– 50...+150 C
Forward voltage
Durchlaspannung
T
j
= 25 C
I
F
= 12 A
V
F
< 0.95 V
Leakage current – Sperrstrom
T
j
= 25 C
V
R
= V
RRM
I
R
< 10 A
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相關代理商/技術參數 |
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