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參數資料
| 型號： | AGR09130EU |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SURFACE MOUNT PACKAGE-2 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 197K |
| 代理商： | AGR09130EU |
Preliminary Data Sheet
April 2004
AGR09130E
130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The
AGR09130E is a high-voltage, laterally diffused
metal oxide semiconductor (LDMOS) RF power tran-
sistor suitable for cellular band, code division multiple
access (CDMA), global system for mobile communi-
cation (GSM), enhanced data for global evolution
(EDGE), and time division multiple access (TDMA)
single and multicarrier class AB wireless base station
amplifier applications. This device is manufactured
on an advanced LDMOS technology offering state-
of-the-art performance, and reliability. Packaged in
an industry-standard package incorporating internal
matching and capable of delivering a minimum out-
put power of 130 W, it is ideally suited for today's RF
power amplifier applications.
Figure 1. Available Packages
Features
s
Typical performance ratings are for the EDGE
format: 3GPP GSM 05.05:
— Output power (POUT): 50 W.
— Power gain: 17.8 dB.
— Modulation spectrum:
@ ±400 kHz = –60 dBc.
@ ±600 kHz = –72 dBc.
— Error vector magnitude (EVM) = 1.8%.
— Return loss: –10 dB.
s
High-reliability, gold-metalization process.
s
Internally matched.
s
High gain, efficiency, and linearity.
s
Integrated ESD protection.
s
Si LDMOS.
s
Industry-standard packages.
s
P1dB of 130 W minimum output power.
Table 1. Thermal Characteristics
Table 2. Absolute Maximum Ratings*
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
AGR09130EU (unflanged)
AGR09130EF (flanged)
)
5B 03 STYLE 1
Parameter
Sym
Value
Unit
Thermal Resistance,
Junction to Case:
AGR09130EU
AGR09130EF
R
θJC
0.5
°C/W
Parameter
Sym
Value
Unit
Drain-source Voltage
VDSS
65
Vdc
Gate-source Voltage
VGS
–0.5, 15
Vdc
Drain Current—Continuous
ID
15
Adc
Total Dissipation at TC = 25 °C:
AGR09130EU
AGR09130EF
PD
350
W
Derate Above 25
°C:
AGR09130EU
AGR09130EF
2.0
W/°C
Operating Junction Tempera-
ture
TJ
200
°C
Storage Temperature Range
TSTG –65, 150
°C
AGR09130E
Minimum (V)
Class
HBM
500
1B
MM
50
A
CDM
1500
4
Draf
tCopy
Only
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