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參數資料
| 型號： | AGR18090EU |
| 廠商： | LSI CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SURFACE MOUNT PACKAGE-2 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 208K |
| 代理商： | AGR18090EU |
Preliminary Data Sheet
April 2004
AGR18090E
90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
Introduction
The AGR18090E is a high-voltage, gold-metalized,
laterally diffused metal oxide semiconductor
(LDMOS) RF power transistor suitable for global sys-
tem for mobile communication (GSM), enhanced
data for global evolution (EDGE), and multicarrier
class AB power amplifier applications. This device is
manufactured using advanced LDMOS technology
offering state-of-the-art performance and reliability. It
is packaged in an industry-standard package and is
capable of delivering a typical output power of 90 W,
which makes it ideally suited for today’s wireless
base station RF power amplifier applications.
Figure 1. Available Packages
Features
s
Typical performance ratings for GSM EDGE
(f = 1.840 GHz, POUT = 30 W):
— Modulation spectrum:
@ ±400 kHz = –63 dBc.
@ ±600 kHz = –73 dBc.
— Error vector magnitude (EVM) = 1.7%.
— Gain = 15 dB.
— Drain Efficiency = 31%.
s
Typical continuous wave (CW) performance over
entire digital communication system (DCS) band:
— P1dB: 90 W typ.
— Power gain: @ P1dB = 14 dB.
— Efficiency @ P1dB = 50% typ.
— Return loss: –10 dB.
s
High-reliability gold-metalization process.
s
Low hot carrier injection (HCI) induced bias drift
over 20 years.
s
Internally matched.
s
High gain, efficiency, and linearity.
s
Integrated ESD protection.
s
90 W minimum output power.
s
Device can withstand 10:1 voltage standing wave
ratio (VSWR) at 26 Vdc, 1.840 GHz, 90 W CW out-
put power.
s
Large signal impedance parameters available.
Table 1. Thermal Characteristics
Table 2. Absolute Maximum Ratings*
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
AGR18090EU (unflanged)
AGR18090EF (flanged)
Parameter
Sym
Value
Unit
Thermal Resistance,
Junction to Case:
AGR18090EU
AGR18090EF
R
θJC
R
θJC
0.75
°C/W
Parameter
Sym
Value
Unit
Drain-source Voltage
VDSS
65
Vdc
Gate-source Voltage
VGS
–0.5, 15
Vdc
Drain Current—Continuous
ID
8.5
Adc
Total Dissipation at TC = 25 °C:
AGR18090EU
AGR18090EF
PD
230
W
Derate Above 25
°C:
AGR18090EU
AGR18090EF
—
1.31
W/°C
Operating Junction Tempera-
ture
TJ
200
°C
Storage Temperature Range
TSTG –65, 150
°C
AGR18090E
Minimum (V)
Class
HBM
500
1B
MM
50
A
CDM
1500
4
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相關代理商/技術參數 |
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