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參數資料
| 型號： | AGR19K180EF |
| 廠商： | LSI CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | FM-4 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 46K |
| 代理商： | AGR19K180EF |
Preliminary Product Brief
March 2004
AGR19K180E
180 W, 1.840 GHz—1.870 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The
AGR19K180EF is a high-voltage, gold-metalized,
laterally diffused me tal oxide semiconductor (LDMOS)
RF power transistor suitable for Korean PCS
(IS-95B N-CDMA [narrowband-code division multiple
access] pilot) (1.840 GHz—1.870 GHz) single and
multicarrier class AB power amplifier applications. This
device is manufactured using advanced LDMOS tech-
nology offering state-of-the-art performance and reli-
ability.
Figure 1. AGR19K180EF (flanged) Package
Features
s
Typical performance ratings for nine carrier Korean
PCS systems with nine Walsh codes per carrier,
27 V, 1.25 MHz carrier bandwidth (BW), adjacent
channel ±750 kHz, alternate channel ±1.98 MHz.
Typical P/A ratio of 11 dB:
— Output power: 21.4 W.
— Power gain: 12 dB min.
— Efficiency: TBD.
— ACPR at 27 V: –46 dBc.
— Spurious emissions: ±1.98 MHz: –40 dBc.
— Return loss: –12 dB.
s
High-reliability, gold-metalization process.
s
Low hot carrier injection (HCI) induced bias drift
over 20 years.
s
Internally matched.
s
High gain, efficiency, and linearity.
s
Integrated ESD protection.
s
Device can withstand a 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 1.855 GHz, 180 W output
power pulsed 4 s at 10% duty.
s
Large signal impedance parameters available.
Table 1. Thermal Characteristics
Table 2. Absolute Maximum Ratings*
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from electro-
static charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
375D–03, STYLE 1
Parameter
Sym
Value
Unit
Thermal Resistance, Junction
to Case
R
θJC
0.35
°C/W
Parameter
Sym
Value
Unit
Drain-source Voltage
VDSS
65
Vdc
Gate-source Voltage
VGS
–0.5, 15
Vdc
Drain Current Continuous
ID
8.5
Adc
Total Dissipation at TC = 25 °CPD
TBD
W
Derate Above 25
°C
—
TBD
W/°C
Operating Junction Tempera-
ture
TJ
200
°C
Storage Temperature Range
TSTG
–65, 150
°C
AGR19K180EF
Minimum (V)
Class
HBM
500
1B
MM
50
A
CDM
1000
4
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相關代理商/技術參數 |
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| AGR21030EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR21045EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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| AGR21060EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR21060EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
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