欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: AGR19K180EU
元件分類: 功率晶體管
英文描述: 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: SURFACE MOUNT PACKAGE-4
文件頁數: 1/3頁
文件大小: 391K
代理商: AGR19K180EU
Preliminary Product Brief
September 2003
AGR19K180E
180 W, 1.840 GHz—1.870 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR19K180E is a high-voltage, gold-metalized,
laterally diffused metal oxide semiconductor (LDMOS)
RF power transistor suitable for Korean PCS
(IS-95B N-CDMA [narrowband-code division multiple
access] pilot) (1.840 GHz—1.870 GHz) single and
multicarrier class AB power amplifier applications. This
device is manufactured using advanced LDMOS tech-
nology offering state-of-the-art performance and reli-
ability.
Figure 1. Available Packages
Features
I Typical performance ratings for nine carrier Korean
PCS systems with nine Walsh codes per carrier,
27 V, 1.25 MHz carrier bandwidth (BW), adjacent
channel ±750 kHz, alternate channel ±1.98 MHz.
Typical P/A ratio of 11 dB:
— Output power: 21.4 W.
— Power gain: 12 dB min.
— Efficiency: TBD.
— ACPR at 27 V: –46 dBc.
— Spurious emissions: ±1.98 MHz: –40 dBc.
— Return loss: –12 dB.
I High-reliability, gold-metalization process.
I Low hot carrier injection (HCI) induced bias drift
over 20 years.
I Internally matched.
I High gain, efficiency, and linearity.
I Integrated ESD protection.
I Device can withstand a 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 1.855 GHz, 180 W output
power pulsed 4 s at 10% duty.
I Large signal impedance parameters available.
Table 1. Thermal Characteristics
Table 2. Absolute Maximum Ratings*
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs both a human-body model (HBM) and a charged-device
model (CDM) qualification requirement in order to determine
ESD-susceptibility limits and protection design evaluation. ESD
voltage thresholds are dependent on the circuit parameters used
in each of the models, as defined by JEDEC's JESD22-A114
(HBM) and JESD22-C101 (CDM) standards.
Caution: MOS devices are susceptible to damage from electro-
static charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
AGR19K180EU
AGR19K180EF
375D–03, STYLE 1
Parameter
Sym
Value
Unit
Thermal Resistance, Junction
to Case:
AGR19K180EU
AGR19K180EF
R
θJC
R
θJC
0.35
°C/W
Parameter
Sym
Value
Unit
Drain-source Voltage
VDSS
65
Vdc
Gate-source Voltage
VGS
–0.5, 15
Vdc
Drain Current Continuous
ID
8.5
Adc
Total Dissipation at TC = 25 °C:
AGR19K180EU
AGR19K180EF
PD
230
TBD
W
Derate Above 25
°C:
AGR19K180EU
AGR19K180EF
1.31
TBD
W/°C
Operating Junction Tempera-
ture
TJ
200
°C
Storage Temperature Range
TSTG
–65, 150
°C
AGR19K180E
Minimum (V)
Class
HBM
500
1B
MM
50
A
CDM
1500
4
相關PDF資料
PDF描述
AGR21060EF S BAND, Si, N-CHANNEL, RF POWER, MOSFET
AGR21060EU S BAND, Si, N-CHANNEL, RF POWER, MOSFET
AGR21180EF S BAND, Si, N-CHANNEL, RF POWER, MOSFET
AGR26045EU UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
AGT-8235R 2000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
相關代理商/技術參數
參數描述
AGR21030EF 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
AGR21045EF 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
AGR21060E 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
AGR21060EF 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
AGR21060EU 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
主站蜘蛛池模板: 浏阳市| 昭觉县| 汉源县| 玉门市| 霍山县| 扬州市| 原平市| 固镇县| 万年县| 沭阳县| 探索| 大方县| 泰州市| 万山特区| 随州市| 长治县| 苍溪县| 江华| 建阳市| 南开区| 防城港市| 宁武县| 九寨沟县| 四子王旗| 黄平县| 正定县| 苏州市| 弋阳县| 普兰店市| 汨罗市| 崇左市| 邵阳县| 蚌埠市| 文水县| 大厂| 织金县| 桦南县| 台湾省| 扶风县| 衡阳市| 新民市|