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參數資料
| 型號： | AGR26180EF |
| 廠商： | LSI CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | FM-4 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 223K |
| 代理商： | AGR26180EF |
Preliminary Data Sheet
May 2004
AGR26180EF
180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR26180EF is a high-voltage, gold-metalized,
enhancement mode, laterally diffused metal oxide
semiconductor (LDMOS) RF power transistor suit-
able for ultrahigh-frequency (UHF) applications,
including multichannel multipoint distribution service
(MMDS) for broadcasting and communications.
Figure 1. AGR26180EF Flanged Package
Features
■
Typical performance for MMDS systems.
f = 2600 MHz, IDQ = 1700 mA, Vds = 28 V,
adjacent channel BW = 3.84 MHz, 5 MHz offset;
alternate channel BW = 3.84 MHz, 10 MHz offset.
Typical P/A ratio of 9.8 dB at 0.01% (probability)
CCDF*:
— Output power: 27 W.
— Power gain: 12.5 dB.
— Efficiency: 20%.
— ACPR: –33 dBc.
— ACLR1: –35 dBc.
— Return loss: –12 dB.
■
Typical pulsed P1dB, 6 s pulse at 10% duty: 185 W.
■
High-reliability, gold-metalization process.
■
Hot carrier injection (HCI) induced bias drift of <5%
over 20 years.
■
Internally matched.
■
High gain, efficiency, and linearity.
■
Integrated ESD protection.
■
Device can withstand a 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 2600 MHz, 180 W output
power pulsed 4 s at 10% duty.
■
Large signal impedance parameters available.
*The test signal utilized is 4-channel W-CDMA Test Model 1. This
test signal provides an equivalent reference (occupied bandwidth
and waveform EPF) for the actual performance with an MMDS
waveform.
Table 1. Thermal Characteristics
Table 2. Absolute Maximum Ratings*
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
375D–03, STYLE 1
Parameter
Sym
Value
Unit
Thermal Resistance,
Junction to Case
R
θJC
0.35
°C/W
Parameter
Sym
Value
Unit
Drain-source Voltage
VDSS
65
Vdc
Gate-source Voltage
VGS
–0.5, +15
Vdc
Total Dissipation at
TC = 25 °C
PD
500
W
Derate Above 25
°C—
3
W/°C
Operating Junction
Temperature
TJ
200
°C
Storage Temperature
Range
TSTG –65, +150
°C
AGR26180EF
Minimum (V)
Class
HBM
500
1B
MM
50
A
CDM
1000
4
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