
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 1 of 6 December 2007
AH103A
High Gain, High Linearity -Watt Amplifier
Product Features
60 – 2700 MHz
+27 dBm P1dB
+46 dBm Output IP3
29 dB Gain @ 900 MHz
Excellent ACPR
MTTF > 100 Years
Lead-free/green/RoHS-compliant
SOIC-8 Package w/ heat slug
Applications
Mobile Infrastructure
W-LAN / ISM / RFID
MDS / MMDS Infrastructure
Product Description
The AH103A is a high gain, high linearity -Watt
amplifier. This device is comprised of two individual
MMIC amplifiers internally and can be used with an
external interstage match for any of the mobile
infrastructure frequency bands.
The dual-stage
amplifier achieves up to +46 dBm IP3 performance
with 29 dB gain.
The device conforms to WJ Communications’ long
history of producing high reliability and quality
components. The AH103A has an associated MTTF
of a minimum of 100 years at a mounting
temperature of 85 °C and is housed in a lead-free
/green/RoHS-compliant
SOIC-8
package.
All
devices are 100% RF & DC tested.
The product is targeted for use as driver amplifiers
for wireless infrastructure where high performance
and high linearity are required.
Functional Diagram
1
2
3
4
8
7
6
5
AMP 1
AMP 2
Function
Pin No.
Amp2 in
1
Amp1 out / Bias 1
2
Ground
3, 5, 8,
Backside copper
RF in (Amp1 in)
4
RF out (Amp2 out)
6
Bias 2
7
Specifications
(1)
Parameter
Units
Min
Typ
Max
Operational Bandwidth
MHz
60
2700
Test Frequency
MHz
900
Gain
dB
29.1
Output IP3
dB
+46
Output P1dB
dBm
+27
Test Frequency
MHz
1900
Gain
dB
23.5
25.4
Input Return Loss
dB
19
Output Return Loss
dB
11
Output IP3
(2)
dBm
+42
+45
Output P1dB
dBm
+25
+26.7
Noise Figure
dB
3
Supply Voltage (Amp1)
V
+4.5
Supply Voltage (Amp2)
V
+9
Operating Current
(3)
mA
225
275
330
1. Test conditions unless otherwise noted: 25 C, Vdd1 = +4.5 V, Vdd2 = +9 V, in a tuned application circuit.
2. 3OIP measured with two tones at an output power of +8 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Amp1 and Amp2 have a typical current draw of 75 and 200 mA, respectively.
Absolute Maximum Rating
Parameter
Rating
Storage Temperature
-55 to +125 °C
DC Voltage (pin 2)
+6 V
DC Voltage (pin 6, 7)
+11 V
RF Input Power (continuous)
4 dB above Input P1dB
Junction Temperature
+160 °C
Thermal Resistance
21° C / W
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance
(1)
Parameter
Units
Typical
Frequency
MHz
900
1900
2140
Gain
dB
29.1
25.4
25
Input Return Loss
dB
20
19
24
Output Return Loss
dB
19
11
Output IP3
dBm
+46
+45
Output P1dB
dBm
+27
+26.7
+26.3
IS-95 Ch. Power
(4)
@ -45 dBc ACPR
dBm
+20.7
+20.5
W-CDMA Ch. Power
(5)
@ -45 dBc ACPR / ACLR
dBm
+18.5
Noise Figure
dB
2.5
3
2.9
Supply Bias Amp1
+4.5 V @ 75 mA
Supply Bias Amp2
+9 V @ 200 mA
4. ACPR is measured at 900 and 1900 MHz with a IS-95, 9 Channels Forward, ±885 kHz offset, 30
kHz BW, 1.23 MHz Channel BW.
5. ACLR is measured at 2140 MHz with a 3GPP W-CDMA, Test Model 1+64 DPCH, ±5 MHz
offset, 3.84 MHz Channel BW.
Ordering Information
Part No.
Description
AH103A-G
High Gain -Watt Amplifier
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
AH103A-PCB900
0.7 – 1.0 GHz Evaluation Circuit
AH103A-PCB1900
1.8 – 2.0 GHz Evaluation Circuit
AH103A-PCB2140
2.1 – 2.2 GHz Evaluation Circuit
Standard T/R size = 500 pieces on a 7” reel.