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參數(shù)資料
| 型號(hào)： | AH115 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 1/2 Watt, High Linearity InGaP HBT Amplifier |
| 中文描述： | 1 / 2瓦特，高線性InGaP HBT功率放大器 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 577K |
| 代理商： | AH115 |
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 1 of 7 May 2005
AH115 / ECP050G
Watt, High Linearity InGaP HBT Amplifier
Product Information
The Communications Edge
TM
Product Features
x
1800
– 2300 MHz
x
+28.5 dBm P1dB
x
+44 dBm Output IP3
x
14 dB Gain @ 1960 MHz
x
+5V Single Positive Supply
x
MTTF > 100 Years
x
Lead-free/green/RoHS-compliant
SOIC-8 SMT Pkg.
Applications
x
Mobile Infrastructure
x
Final Stage Amplifier for
Repeaters
Specifications
(1)
Product Description
The AH115 / ECP050 is a high dynamic range driver
amplifier in a low-cost surface mount package. The
InGaP/GaAs HBT is able to achieve high performance for
various narrow-band tuned application circuits with up to
+44 dBm OIP3 and +28.5 dBm of compressed 1-dB power.
All devices are 100% RF and DC tested. The AH115 /
ECP050 is available in lead-free/green/RoHS-compliant
SOIC-8 package.
The product is targeted for use as driver amplifiers for
wireless infrastructure where high linearity and medium
power is required. The internal active bias allows the
AH115 / ECP050 to maintain high linearity over
temperature and operate directly off a +5 V supply. This
combination makes the device an excellent fit for
transceiver line cards and power amplifiers in current and
next generation multi-carrier 3G base stations.
Typical Performance
(1)
Functional Diagram
Function
Vref
Input / Base
Output / Collector
Vbias
Pin No.
1
3
6, 7
8
Backside
Paddle
2, 4, 5
GND
N/C or GND
Parameters
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
(2)
IS-95A Channel Power
@ -45 dBc ACPR, 1960 MHz
W-CDMA Channel Power
@ -45 dBc ACLR, 2140 MHz
Noise Figure
Operating Current Range
(3)
Device Voltage
Units Min
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
Typ
2140
14.4
23
8
+28.5
+42
+22.5
Max
2300
1800
12.5
+26.5
+41
dBm
dB
mA
V
+20
5.3
250
+5
200
300
1. Test conditions unless otherwise noted.
25oC, Vsupply = +5 V in tuned application circuit.
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions. It is
expected that the current can increase up to 300mA at P1dB.
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Junction Temperature
Rating
-40 to +85
q
C
-65 to +150
q
C
+22 dBm
+8 V
400 mA
2 W
+250
q
C
Operation of this device above any of these parameters may cause permanent damage.
Parameters
Frequency
Gain
S11
S22
Output P1dB
Output IP3
(2)
IS-95A Channel Power
@ -45 dBc ACPR,
W-CDMA Channel Power
@ -45 dBc ACLR
Noise Figure
Supply Bias
Units
MHz
dB
dB
dB
dBm
dBm
dBm
Typical
1960
14.3
-12
-8
+28.3
+44
+22.5
2140
14.4
-23
-8
+28.5
+42
dBm
dB
+20
5.3
5
+5 V @ 250 mA
Ordering Information
Part No.
AH115-S8
Description
Watt, High Linearity InGaP HBT Amplifier
(lead-tin SOIC-8 Pkg)
Watt, High Linearity InGaP HBT Amplifier
(lead-tin SOIC-8 Pkg)
Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
1960 MHz Evaluation Board
2140 MHz Evaluation Board
ECP050G
AH115-S8G
AH115-S8PCB1960
AH115-S8PCB2140
1
2
3
4
8
7
6
5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AH115-S8PCB2140 | 1/2 Watt, High Linearity InGaP HBT Amplifier |
| AH115-S8 | 1/2 Watt, High Linearity InGaP HBT Amplifier |
| AH115-S8G | 1/2 Watt, High Linearity InGaP HBT Amplifier |
| AH115-S8PCB1960 | JT 128C 128#22D SKT RECP |
| AHF2800 | LJT 46C 40#20 4#16 2#8(COAX) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AH1157 | 制造商:FARADAY 制造商全稱:FARADAY 功能描述:ACTIVE GROUP DELAY CORRECTOR NETWORK |
| AH115-S8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1/2 Watt, High Linearity InGaP HBT Amplifier |
| AH115-S8G | 功能描述:射頻放大器 1800-2300MHz 14dB Gain@1960MHz RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| AH115-S8-G | 制造商:TriQuint Semiconductor 功能描述:RF & MW DRIVER AMPLIFIER 制造商:TriQuint Semiconductor 功能描述:RF Amp Chip Single GP 2.3GHz 8-Pin SOIC |
| AH115-S8PCB1960 | 功能描述:射頻開(kāi)發(fā)工具 1960MHz Eval Brd 14.4dB Gain RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評(píng)估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V |
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