
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
Phone 503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com
Page 1 of 12 April 2010
AH125
W High Linearity InGaP HBT Amplifier
Product Features
400 – 3600 MHz
+28 dBm P1dB
+45 dBm Output IP3
16.2 dB Gain @ 2140 MHz
150 mA current draw
+5 V Single Supply
MTTF > 100 Years
Lead-free/Green/RoHS-compliant
SOT-89 Package
Class 2 HBM ESD rating (>2kV)
Applications
Repeaters
Mobile Infrastructure
LTE / WCDMA / EDGE / CDMA
Product Description
The AH125 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve high performance across a broad range with
+45 dBm OIP3 and +28 dBm of compressed 1dB power
while drawing 150 mA current. The AH125 is available in
a lead-free/green/RoHS-compliant SOT-89 package.
All
devices are 100% RF and DC tested.
The AH125 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity, medium power,
and high efficiency are required. Internal biasing allows
the AH125 to maintain high linearity over temperature and
operate directly off a single +5V supply. This combination
makes the device an excellent candidate for transceiver line
cards in current and next generation multi-carrier 3G base
stations or repeaters.
Functional Diagram
RF IN
GND
RF OUT
GND
1
23
4
Function
Pin No.
RF Input
1
RF Output / Vcc
3
Ground
2, 4
Specifications
Parameter
Units
Min
Typ
Max
Operational Bandwidth
MHz
400
3600
Test Frequency
MHz
2140
Gain
dB
14
16.2
18
Input Return Loss
dB
12
Output Return Loss
dB
12
W-CDMA Channel Power(2)
@ -50 dBc ACLR
dBm
+19
Output P1dB
dBm
+28
Output IP3(3)
dBm
+41
+45
Noise Figure
dB
4.4
Quiescent Collector Current
mA
130
150
170
Device Voltage
V
+5
1. Test conditions unless otherwise noted: 25C, Vsupply = +5 V, in tuned application circuit.
2. W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB @ 0.01% Probability, 3.84 MHz BW
3. OIP3 is measured with two tones separated by 1 MHz. The suppression on the largest IM3 product
is used to calculate the OIP3 using a 2:1 rule. Measured at 17dBm/tone for 900 MHz, 14 dBm/tone
for 1960 MHz, and 12 dBm/tone for 2140 MHz.
Absolute Maximum Rating
Parameter
Rating
Storage Temperature
-65 to +150
°C
RF Input Power, CW, 50
Ω, T=25°C
Input P10dB
Device Voltage
+6 V
Max Junction Temperature, TJ
For 106 hours MTTF
200
°C
Thermal Resistance, ΘJC
64.3
°C / W
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance
Parameter
Units
Typical
Frequency
MHz
920
1960
2140
Gain
dB
20
17
16.2
Input Return Loss
dB
20
16
12
Output Return Loss
dB
9.9
9
12
W-CDMA Channel Power(2)
@ -50 dBc ACLR
dBm
+19
Output P1dB
dBm
+28.1
+27.8
+28.0
Output IP3 (3)
dBm
+47
+45
Noise Figure
dB
7.7
4.6
4.4
Quiescent Collector Current
mA
150
Device Voltage
V
+5
Ordering Information
Part No.
Description
AH125-89G
W High Linearity InGaP HBT Amplifier
AH125-89PCB900
900 MHz Evaluation Board
AH125-89PCB1960
1960 MHz Evaluation Board
AH125-89PCB2140
2140 MHz Evaluation Board
AH125-89PCB2600
2600 MHz Evaluation Board
Standard T/R size = 1000 pieces on a 7” reel.