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參數資料
| 型號： | AH22 |
| 元件分類： | 放大器 |
| 英文描述： | 50 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | SOIC-8 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 255K |
| 代理商： | AH22 |
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 1 of 5 February 2005
The Communications Edge
TM
AH22
High Dynamic Range CATV Amplifier
Product Information
Product Features
50 – 1000 MHz
±0.2 dB Gain Flatness
+24 dBm P1dB
-74 dBc CTB / CSO
+39dBmV/channel, 77 channels
+42 dBm Output IP3
+76 dBm Output IP2
Matched amplifiers for a push-
pull configuration
+5V Single Positive Supply
MTTF > 1000 years
Applications
CATV Head End Equipment
CATV Line Amplifiers
FTTH Repeaters
Product Description
The AH22 is a high dynamic range amplifier targeting
cable TV markets.
The combination of gain flatness,
high linearity, and bandwidth makes it ideal for CATV
distribution, cable modem, and laser diode driver
applications.
The device uses two matched AH2 devices and is ideal
for operation in a push-pull configuration to achieve high
second order linearity.
A mature and reliable GaAs
MESFET technology is employed to maximize linearity
at low power dissipation.
The package is thermally enhanced in a SOIC-8 with all
devices being 100% RF and dc tested.
Functional Diagram
Function
Pin No.
Amp 1 Input
1
Amp 2 Input
4
Amp 2 Output
5
Amp 1 Output
8
Ground
2, 3, 6, 7,
Backside
paddle
Single-ended Device Specifications
Parameter
Units
Min
Typ
Max
Test Frequency
MHz
800
Gain
dB
13
14.5
Output IP3
(2)
dBm
+37
+40
Device Current
mA
120
150
180
Device Voltage
V
5
Test conditions unless otherwise noted.
1. T = 25C, Vdd = +5 V, 800 MHz on each individual single-branch amplifier in a 50
Ω test fixture.
2. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Typical parameters reflect performance in a push-pull application circuit as shown on page 3. The
only difference in the currently recommended design and the previous one is that R1 = R2 = 390
Ω.
The configuration and all other component values have remained the same.
4. Balun, board, and connector losses have not been extracted, but typically account of 0.4 dB loss
midband and 1.1 dB loss at 860 MHz.
5. Measured at +39 dBmV/channel, 77 channels Flat Loading.
6. OIP2 is measured at f1 + f2 at 8 dBm / tone.
7. OIP3 is measured at 8 dBm / tone with 10 MHz spacing.
8. Typical parameters reflect performance in a push-pull application circuit as shown on page 4. The circuit is
same as on the previous AH22 datasheets with R1 = R2 = 560
Ω. The linearity and compression
performance are the same as the performance shown in the first table on the right-hand column.
Typical Performance
(3)
Configuration A (with R1 = R2 = 390
Ω feedback resistors)
Parameter
Units
Typical
Frequency
MHz
50
250
450
860
Gain
(4)
dB
9.8
9.6
9.3
Input Return Loss
dB
14
14.3
15.5
Output Return Loss
dB
16
17
23
CTB
(5)
dBc
-77
-74
CSO
(5)
dBc
-72
-80
-75
XMOD
(5)
dBc
-64
Output P1dB
dBm
+25.2
+24.5
+24.1
+23
Output IP2
(6)
dBm
+76
+75
+77
+76
Output IP3
(7)
dBm
+43
+45
+42
Noise Figure
dB
5.5
4.5
4.6
Device Bias
V
+5 V @ 300 mA
Typical Performance
(8)
Configuration B (with R1 = R2 = 560
Ω feedback resistors)
Parameter
Units
Typical
Frequency
MHz
50
250
450
860
Gain
(4)
dB
11
10.8
10.9
10.5
Input Return Loss
dB
11.8
11.7
12.5
14.3
Output Return Loss
dB
13.6
12.7
12.0
17.1
Device Bias
V
+5 V @ 300 mA
Absolute Maximum Rating
Ordering Information
Parameters
Rating
Part No.
Description
Operating Case Temperature
-40 to +85
°C
AH22
High Dynamic Range CATV Amplifier
Storage Temperature
-55 to +125
°C
RF Input Power (continuous)
+13 dBm
DC Voltage
+6 V
Junction Temperature
220
°C
Operation of this device above any of these parameters may cause permanent damage.
1
2
3
4
8
7
6
5
相關PDF資料 |
PDF描述 |
|---|---|
| AH266-PL-A | MAGNETIC FIELD SENSOR-HALL EFFECT, -7-7mT, 1.10-1.50V, RECTANGULAR, THROUGH HOLE MOUNT |
| AH266-PL-B | MAGNETIC FIELD SENSOR-HALL EFFECT, -10-10mT, 1.10-1.50V, RECTANGULAR, THROUGH HOLE MOUNT |
| AH266-PLA-A | MAGNETIC FIELD SENSOR-HALL EFFECT, -7-7mT, 1.10-1.50V, RECTANGULAR, THROUGH HOLE MOUNT |
| AH266-P-B | MAGNETIC FIELD SENSOR-HALL EFFECT, -10-10mT, 1.10-1.50V, RECTANGULAR, THROUGH HOLE MOUNT |
| AH266-PA-A | MAGNETIC FIELD SENSOR-HALL EFFECT, -7-7mT, 1.10-1.50V, RECTANGULAR, THROUGH HOLE MOUNT |
相關代理商/技術參數 |
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| AH225-S8G | 功能描述:射頻放大器 1W. RF AMP 400-2700MHz RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數:0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| AH225-S8PCB1960 | 功能描述:射頻放大器 1930-1960MHz 1W Eval Board RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數:0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| AH225-S8PCB2140 | 功能描述:射頻放大器 2110-2170MHz 1W Eval Board RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數:0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| AH225-S8PCB900 | 功能描述:射頻放大器 920-960MHz 1W Eval Board RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數:0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
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