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參數資料
| 型號： | ALD1103SB |
| 廠商： | Advanced Linear Devices, Inc. |
| 英文描述： | JT 21C 21#16 SKT GRND PLUG |
| 中文描述： | 雙N溝道和雙P溝道MOSFET的一對匹配 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 68K |
| 代理商： | ALD1103SB |
DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR
GENERAL DESCRIPTION
The ALD1103 is a monolithic dual N-channel and dual P-channel matched
transistor pair intended for a broad range of analog applications. These
enhancement-mode transistors are manufactured with Advanced Linear
Devices' enhanced ACMOS silicon gate CMOS process. It consists of an
ALD1101 N-channel MOSFET pair and an ALD1102 P-channel MOSFET
pair in one package.
The ALD1103 offers high input impedance and negative current temperature
coefficient. The transistor pair is matched for minimum offset voltage and
differential thermal response, and it is designed for precision signal
switching and amplifying applications in +2V to +12V systems where low
input bias current, low input capacitance and fast switching speed are
desired. Since these are MOSFET devices, they feature very large (almost
infinite) current gain in a low frequency, or near DC, operating environment.
When used in pairs, a dual CMOS analog switch can be constructed. In
addition, the ALD1103 is intended as a building block for differential
amplifier input stages, transmission gates, and multiplexer applications.
The ALD1103 is suitable for use in precision applications which require
very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the Field Effect
Transistors result in extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which is
specified at 50pA at room temperature. For example, DC beta of the device
at a drain current of 5mA at 25
°C is = 5mA/50pA = 100,000,000.
FEATURES
Thermal tracking between N-channel and P-channel pairs
Low threshold voltage of 0.7V for both N-channel &
P-channel MOSFETS
Low input capacitance
Low Vos -- 10mV
High input impedance -- 1013
typical
Low input and output leakage currents
Negative current (IDS) temperature coefficient
Enhancement mode (normally off)
DC current gain 109
Matched N-channel and matched P-channel in one package
ALD1103
ADVANCED
LINEAR
DEVICES, INC.
PIN CONFIGURATION
APPLICATIONS
Precision current mirrors
Complementary push-pull linear drives
Analog switches
Choppers
Differential amplifier input stage
Voltage comparator
Data converters
Sample and Hold
Analog inverter
Precision matched current sources
DN2
GN2
SN2
GP2
SP2
GN1
SN1
DP1
GP1
1
2
3
4
DB, PB, SB PACKAGE
5
6
7
8
9
10
11
12
13
14
DN1
V+
V-
DP2
SP1
BLOCK DIAGRAM
N SOURCE 1 (3)
SUBSTRATE (4)
N SOURCE 2 (12)
N GATE 2 (13)
N DRAIN 1 (1)
N GATE 1 (2)
N DRAIN 2 (14)
P SOURCE 1 (7)
SUBSTRATE (11)
P SOURCE 2 (8)
P GATE 2 (9)
P DRAIN 1 (5)
P GATE 1 (6)
P DRAIN 2 (10)
Operating Temperature Range*
-55
°C to +125°C0°C to +70°C0°C to +70°C
14-Pin
CERDIP
Plastic Dip
SOIC
Package
ALD1103 DB
ALD1103 PB
ALD1103 SB
* Contact factory for industrial temperature range.
ORDERING INFORMATION
1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
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相關代理商/技術參數 |
參數描述 |
|---|---|
| ALD1103SBL | 功能描述:MOSFET Dual P&N-Ch. Pair RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ALD1105 | 制造商:ALD 制造商全稱:Advanced Linear Devices 功能描述:DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET |
| ALD1105_12 | 制造商:ALD 制造商全稱:Advanced Linear Devices 功能描述:DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR |
| ALD1105DB | 制造商:ALD 制造商全稱:Advanced Linear Devices 功能描述:DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET |
| ALD1105PB | 制造商:ALD 制造商全稱:Advanced Linear Devices 功能描述:DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET |
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