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參數資料
| 型號： | ALD1117DA |
| 廠商： | Advanced Linear Devices, Inc. |
| 英文描述： | QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY |
| 中文描述： | 四/雙P溝道MOSFET的陣列匹配 |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 61K |
| 代理商： | ALD1117DA |
D
P1
(1)
D
P2
(14)
G
P1
(2)
S
P1
(3)
S
P2
(12)
V+ (11)
G
P2
(13)
D
P3
(10)
D
P4
(5)
G
P3
(9)
S
P3
(8)
S
P4
(7)
~
V- (4)
V+ (11)
G
P4
(6)
ALD1107
BLOCK DIAGRAM
GENERAL DESCRIPTION
The ALD1107/ALD1117 are monolithic quad/dual P-channel enhance-
ment mode matched MOSFET transistor arrays intended for a broad range
of precision analog applications. The ALD1107/ALD1117 offer high input
impedance and negative current temperature coefficient. The transistor
pairs are matched for minimum offset voltage and differential thermal
response, and they are designed for precision analog switching and
amplifying applications in +2V to +12V systems where low input bias
current, low input capacitance and fast switching speed are desired. These
MOSFET devices feature very large (almost infinite) current gain in a low
frequency, or near DC operating environment. The ALD1107/ALD1117 are
builiding blocks for differential amplifier input stages, transmission gates,
multiplexer applications, current sources, current mirrors and other preci-
sion analog circuits.
APPLICATIONS
Precision current sources
Precision current mirrors
Voltage Choppers
Differential amplifier input stage
Voltage comparator
Data converters
Sample and Hold
Precision analog signal processing
A
DVANCED
L
INEAR
D
EVICES,
I
NC.
QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY
ALD1107/ALD1117
FEATURES
Low threshold voltage of -0.7
Low input capacitance
Low V
OS
2mV typical
High input impedance -- 10
14
typical
Low input and output leakage currents
Negative current (I
DS
) temperature coefficient
Enhancement-mode (normally off)
DC current gain 10
9
Low input and output leakage currents
Operating Temperature Range*
0
°
C to +70
°
C
-55
°
C to +125
°
C
0
°
C to +70
°
C
8-Pin CERDIP
Package
8-Pin Plastic Dip
Package
8-Pin SOIC
Package
ALD1117 DA
ALD1117PA
ALD1117 SA
14-Pin CERDIP
Package
14-Pin Plastic Dip
Package
14-Pin SOIC
Package
ALD1107 DB
ALD1107 PB
ALD1107 SB
ORDERING INFORMATION
* Contact factory for industrial temperature range.
PIN CONFIGURATION
BLOCK DIAGRAM
DP2
GP2
SP2
GP3
SP3
GP1
SP1
DP4
GP4
1
2
3
4
DB, PB, SB PACKAGE
5
6
7
8
9
10
11
12
13
14
DP1
V
+
V
-
DP3
SP4
1
ALD1107
D
P1
(1)
D
P2
(8)
~
G
P1
(2)
S
P1
(3)
S
P2
(6)
V - (4)
V+ (5)
G
P2
(7)
ALD1117
DP2
GP2
SP2
GP1
SP1
1
2
3
4
DA, PA, SA PACKAGE
5
6
7
8
DP1
V
+
V
-
1
ALD1117
1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
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相關代理商/技術參數 |
參數描述 |
|---|---|
| ALD1117PA | 功能描述:MOSFET Dual P-Channel Array RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ALD1117PAL | 功能描述:MOSFET Dual P-Channel Array RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ALD1117SA | 功能描述:MOSFET Dual P-Channel Array RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ALD1117SAL | 功能描述:MOSFET Dual P-Channel Array RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ALD111910MAL | 功能描述:MOSFET Dual N-Ch FET EPAD Matched Pair Array RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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