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參數資料
| 型號： | AM035N5-00 |
| 元件分類： | 混頻器 |
| 英文描述： | 32000 MHz - 37000 MHz RF/MICROWAVE DOUBLE BALANCED MIXER, 8 dB CONVERSION LOSS-MAX |
| 封裝： | CHIP |
| 文件頁數： | 1/2頁 |
| 文件大小： | 56K |
| 代理商： | AM035N5-00 |
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
1
Specifications subject to change without notice. 2/00A
32–37 GHz GaAs MMIC
Ring Hybrid Mixer
Features
I Low Conversion Loss, 6.0 dB
I Low LO Power Requirement, 9 dBm
I High LO to RF Isolation, 28 dB
I No DC Bias Required
Description
Alpha’s ring hybrid GaAs Schottky diode mixer has a
typical conversion loss of 6.0 dB at an LO power level as
low as 9 dBm over the band 32–37 GHz. The chip uses
Alpha’s proven Schottky diode technology, and is based
upon MBE layers for the highest uniformity and
repeatability. The diodes employ surface passivation to
ensure a rugged, reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
an epoxy die attach process. All chips are screened for
DC diode parameters and lot samples are RF measured
to guarantee performance.
Dimensions indicated in mm.
All pads are
≥ 0.07 mm wide.
Chip thickness = 0.1 mm.
Chip Outline
Parameter
Symbol
Min.
Typ.2
Max.
Unit
RF and LO Frequency Range
FRF, FLO
32–37
GHz
IF Frequency Range
FIF
0–3
GHz
LO Power Level
PLO
9–19
dBm
Conversion Loss1
LC
6dB
RF and LO Return Loss1
RLRF, RLLO
9dB
LO to RF Isolation1
ISOLO-RF
28
dB
LO to IF Isolation1
ISOLO-IF
35
dB
RF Input 1 dB Compression Point1
P1 dB
10
dBm
Individual Diode Series Resistance
RS
4.0
Electrical Specifications at 25°C
0.000
0.541
2.800
2.027
2.471
3.195
Absolute Maximum Ratings
Characteristic
Value
Operating Temperature
-55°C to +125°C
Storage Temperature
-65°C to +150°C
Total Input Power (RF + LO)
20 dBm
AM035N5-00
1. Not measured on a 100% basis.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.
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