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參數資料
| 型號： | AM038S1-00 |
| 廠商： | Alpha Industries, Inc. |
| 英文描述： | LJT 5C 5#16 SKT RECP |
| 中文描述： | 33-43 GHz的砷化鎵微波單片集成電路單平衡下變頻混頻器 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 88K |
| 代理商： | AM038S1-00 |
Alpha Industries, Inc.
[781] 935-5150
Fax
[617] 824-4579
Email
sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 2/00A
1
33–43 GHz GaAs MMIC Single
Balanced Down Converter Mixer
Features
I
Low Conversion Loss, 6.5 dB
I
Low LO Power Requirement, 6 dBm
I
Wide IF Bandwidth, 0–5 GHz
I
No DC Bias Required
Description
Alpha’s single balanced GaAs Schottky diode mixer has
a typical conversion loss of 6.5 dB at an LO power level
as low as 6.5 dBm over the band 33–43 GHz. The chip
uses Alpha’s proven Schottky diode technology, and is
based upon MBE layers for the highest uniformity and
repeatability. The diodes employ surface passivation to
ensure a rugged, reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
an epoxy die attach process. All chips are screened for
DC diode parameters and lot samples are RF measured
to guarantee performance.
Dimensions indicated in mm.
All pads are
≥
0.07 mm wide.
Chip thickness = 0.1 mm.
Chip Outline
Parameter
Symbol
F
RF
, F
LO
F
IF
P
LO
L
C
RL
RF
, RL
LO
ISO
LO-RF
ISO
LO-IF
P
1 dB
R
S
Min.
Typ.
2
33–43
0–5
6–18
6.5
25
15
45
5
Max.
Unit
GHz
GHz
dBm
dB
dB
dB
dB
dBm
RF and LO Frequency Range
IF Frequency Range
LO Power Level
Conversion Loss
1
RF and LO Return Loss
1
LO to RF Isolation
1
LO to IF Isolation
1
RF Input 1 dB Compression Point
1
Individual Diode Series Resistance
3.3
Electrical Specifications at 25°C
O
O
OHMIC ADDED 9-4-92
0
0.000
0
1
1.435
1.102
1.121
Absolute Maximum Ratings
Characteristic
Value
Operating Temperature
-55
°
C to +125
°
C
Storage Temperature
-65
°
C to +150
°
C
Total Input Power (RF + LO)
20 dBm
AM038S1-00
1. Not measured on a 100% basis.
2.Typical represents the median parameter value across the specified
frequency range for the median chip.
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