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參數(shù)資料
| 型號： | AM27C256-200 |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 8-input positive-NAND gates 14-SO 0 to 70 |
| 中文描述： | 256千比特（32,768 × 8位）的CMOS存儲器 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 171K |
| 代理商： | AM27C256-200 |
FINAL
Publication#
08007
Issue Date:
May 1998
Rev:
I
Amendment/
0
Am27C256
256 Kilobit (32 K x 8-Bit) CMOS EPROM
DISTINCTIVE CHARACTERISTICS
I
Fast access time
— Speed options as fast as 45 ns
I
Low power consumption
— 20 μA typical CMOS standby current
I
JEDEC-approved pinout
I
Single +5 V power supply
I
±
10% power supply tolerance standard
I
100% Flashrite programming
— Typical programming time of 4 seconds
I
Latch-up protected to 100 mA from –1 V to
V
CC
+ 1 V
I
High noise immunity
I
Versatile features for simple interfacing
— Both CMOS and TTL input/output compatibility
— Two line control functions
I
Standard 28-pin DIP, PDIP, and 32-pin PLCC
packages
GENERAL DESCRIPTION
The Am27C256 is a 256-Kbit, ultraviolet erasable pro-
grammable read-only memory. It is organized as 32K
words by 8 bits per word, operates from a single +5 V
supply, has a static standby mode, and features fast
single address location programming. Products are
available in windowed ceramic DIP packages, as well
as plastic one time programmable (OTP) PDIP and
PLCC packages.
Data can be typically accessed in less than 55 ns, al-
lowing high-performance microprocessors to operate
without any WAIT states. The device offers separate
Output Enable (OE#) and Chip Enable (CE#) controls,
thus eliminating bus contention in a multiple bus micro-
processor system.
AMD’s CMOS process technology provides high
speed, low power, and high noise immunity. Typical
power consumption is only 80 mW in active mode, and
100 μW in standby mode.
All signals are TTL levels, including programming sig-
nals. Bit locations may be programmed singly, in
blocks, or at random. The device supports AMD’s
Flashrite programming algorithm (100 μs pulses), re-
sulting in a typical programming time of 4 seconds.
BLOCK DIAGRAM
08007I-1
A0–A14
Address
Inputs
CE#
OE#
V
CC
V
SS
V
PP
Data Outputs
DQ0–DQ7
Output
Buffers
Y
Gating
262,144
Bit Cell
Matrix
X
Decoder
Y
Decoder
Output Enable
Chip Enable
and
Prog Logic
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM27C256-200DC | 8-input positive-NAND gates 14-SO 0 to 70 |
| AM27C256-200DCB | 256 Kilobit (32 K x 8-Bit) CMOS EPRO |
| AM27C256-200DE | Hex Delay Elements for Generating Delay Lines 16-SOIC 0 to 70 |
| AM27C256-200DEB | 256 Kilobit (32 K x 8-Bit) CMOS EPRO |
| AM27C256-200DI | 256 Kilobit (32 K x 8-Bit) CMOS EPRO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM27C256-200DC | 制造商:Advanced Micro Devices 功能描述: 制造商:AMD ? 功能描述: 制造商:Advanced Micro Devices 功能描述:EPROM, 32K x 8, 28 Pin, Ceramic, DIP |
| AM27C256-200DE | 制造商:Advanced Micro Devices 功能描述:EPROM, 32K x 8, 28 Pin, Ceramic, DIP |
| AM27C256200DI | 制造商:AMD 功能描述:Programmed |
| AM27C256-200DI | 制造商:Rochester Electronics LLC 功能描述: |
| AM27C256-200JC | 制造商:Advanced Micro Devices 功能描述:32K X 8 OTPROM, 200 ns, PQCC32 |
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