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參數(shù)資料
| 型號： | AM28F010-120JIB |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| 中文描述： | 128K X 8 FLASH 12V PROM, 120 ns, PQCC32 |
| 封裝： | PLASTIC, LCC-32 |
| 文件頁數(shù)： | 1/35頁 |
| 文件大小： | 492K |
| 代理商： | AM28F010-120JIB |
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FINAL
Publication#
11559
Issue Date:
January 1998
Rev:
H
Amendment/
+2
Am28F010
1 Megabit (128 K x 8-Bit)
CMOS 12.0 Volt, Bulk Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
I
High performance
— 70 ns maximum access time
I
CMOS Low power consumption
— 30 mA maximum active current
— 100 μA maximum standby current
— No data retention power consumption
I
Compatible with JEDEC-standard byte-wide
32-Pin EPROM pinouts
— 32-pin PDIP
— 32-pin PLCC
— 32-pin TSOP
I
10,000 write/erase cycles minimum
I
Write and erase voltage 12.0 V
±
5%
I
Latch-up protected to 100 mA
from –1 V to V
CC
+1 V
I
Flasherase
Electrical Bulk Chip-Erase
— One second typical chip-erase
I
Flashrite Programming
— 10 μs typical byte-program
— Two seconds typical chip program
I
Command register architecture for
microprocessor/microcontroller compatible
write interface
I
On-chip address and data latches
I
Advanced CMOS flash memory technology
— Low cost single transistor memory cell
I
Automatic write/erase pulse stop timer
GENERAL DESCRIPTION
The Am28F010 is a 1 Megabit Flash memory orga-
nized as 128 Kbytes of 8 bits each. AMD’s Flash mem-
ories offer the most cost-effective and reliable read/
write non-volatile random access memory. The
Am28F010 is packaged in 32-pin PDIP, PLCC, and
TSOP versions. It is designed to be reprogrammed
and erased in-system or in standard EPROM pro-
grammers. The Am28F010 is erased when shipped
from the factory.
The standard Am28F010 offers access times as fast as
70 ns, allowing operation of high-speed microproces-
sors without wait states. To eliminate bus contention,
the Am28F010 has separate chip enable (CE#) and
output enable (OE#) controls.
AMD’s Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
Am28F010 uses a command register to manage this
functionality, while maintaining a JEDEC Flash Stan-
dard 32-pin pinout. The command register allows for
100% TTL level control inputs and fixed power supply
levels during erase and programming, while maintain-
ing maximum EPROM compatibility.
AMD’s Flash technology reliably stores memory con-
tents even after 10,000 erase and program cycles. The
AMD cell is designed to optimize the erase and pro-
gramming mechanisms. In addition, the combination of
advanced tunnel oxide processing and low internal
electric fields for erase and programming operations
produces reliable cycling. The Am28F010 uses a
12.0V
±
5% V
PP
high voltage input to perform the
Flasherase
and Flashrite
algorithms.
The highest degree of latch-up protection is achieved
with AMD’s proprietary non-epi process. Latch-up pro-
tection is provided for stresses up to 100 milliamps on
address and data pins from –1 V to V
CC
+1 V.
The Am28F010 is byte programmable using 10 ms pro-
gramming pulses in accordance with AMD’s Flashrite
programming algorithm. The typical room temperature
programming time of the Am28F010 is two seconds.
The entire chip is bulk erased using 10 ms erase pulses
according to AMD’s Flasherase alrogithm. Typical era-
sure at room temperature is accomplished in less than
one second. The windowed package and the 15–20
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM28F010-120LC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AM28F010-120LE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AM28F010-120LEB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AM28F010-120LI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AM28F010-120PC | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
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