- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366384 > AM28F020-120FEB (ADVANCED MICRO DEVICES INC) 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory PDF資料下載
參數(shù)資料
| 型號： | AM28F020-120FEB |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| 中文描述： | 256K X 8 FLASH 12V PROM, 120 ns, PDSO32 |
| 封裝： | REVERSE, TSOP-32 |
| 文件頁數(shù)： | 1/35頁 |
| 文件大小： | 509K |
| 代理商： | AM28F020-120FEB |
當(dāng)前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁
FINAL
Publication#
14727
Issue Date:
January 1998
Rev:
F
Amendment/
+2
Am28F020
2 Megabit (256 K x 8-Bit)
CMOS 12.0 Volt, Bulk Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
I
High performance
— Access times as fast as 70 ns
I
CMOS low power consumption
— 30 mA maximum active current
— 100 μA maximum standby current
— No data retention power consumption
I
Compatible with JEDEC-standard byte-wide
32-pin EPROM pinouts
— 32-pin PDIP
— 32-pin PLCC
— 32-pin TSOP
I
10,000 write/erase cycles minimum
I
Write and erase voltage 12.0 V
±
5%
I
Latch-up protected to 100 mA from
–1 V to V
CC
+1 V
I
Flasherase Electrical Bulk Chip Erase
— One second typical chip erase time
I
Flashrite Programming
— 10 μs typical byte program time
— 4 s typical chip program time
I
Command register architecture for
microprocessor/microcontroller compatible
write interface
I
On-chip address and data latches
I
Advanced CMOS flash memory technology
— Low cost single transistor memory cell
I
Automatic write/erase pulse stop timer
GENERAL DESCRIPTION
The Am28F020 is a 2 Megabit Flash memory orga-
nized as 256 Kbytes of 8 bits each. AMD’s Flash mem-
ories offer the most cost-effective and reliable read/
write non-volatile random access memory. The
Am28F020 is packaged in 32-pin PDIP, PLCC, and
TSOP versions. It is designed to be reprogrammed and
erased in-system or in standard EPROM programmers.
The Am28F020 is erased when shipped from
the factory.
The standard Am28F020 offers access times of as fast
as 70 ns, allowing high speed microprocessors to
operate without wait states. To eliminate bus conten-
tion, the device has separate chip enable (CE#) and
output enable (OE#) controls.
AMD’s Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
Am28F020 uses a command register to manage this
functionality, while maintaining a JEDEC-standard 32-
pin pinout. The command register allows for 100% TTL
level control inputs and fixed power supply levels during
erase and programming, while maintaining maximum
EPROM compatibility.
AMD’s Flash technology reliably stores memory con-
tents even after 10,000 erase and program cycles. The
AMD cell is designed to optimize the erase and pro-
gramming mechanisms. In addition, the combination of
advanced tunnel oxide processing and low internal
electric fields for erase and programming operations
produces reliable cycling. The Am28F020 uses a
12.0
±
5% V
PP
supply input to perform the Flasherase
and Flashrite functions.
The highest degree of latch-up protection is achieved
with AMD’s proprietary non-epi process. Latch-up pro-
tection is provided for stresses up to 100 mA on
address and data pins from –1 V to V
CC
+1 V.
The Am28F020 is byte programmable using 10 μs
programming pulses in accordance with AMD’s
Flashrite programming algorithm. The typical room
temperature programming time of the Am28F020 is
four seconds. The entire chip is bulk erased using 10
ms erase pulses according to AMD’s Flasherase
algorithm. Typical erasure at room temperature is
accomplished in less than one second. The windowed
package and the 15–20 minutes required for EPROM
erasure using ultraviolet light are eliminated.
Commands are written to the command register using
standard microprocessor write timings. Register con-
tents serve as input to an internal state-machine, which
controls the erase and programming circuitry. During
write cycles, the command register internally latches
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM28F020-120FI | 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F020-120JC | 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F020-120JCB | 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F020-120JE | 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F020-120JI | 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM28F020-120FI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F020-120FIB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F020-120JC | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F020-120JCB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F020-120JE | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。