- 您現在的位置：買賣IC網 > PDF目錄366385 > AM28F020A-200JEB (ADVANCED MICRO DEVICES INC) 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms PDF資料下載
參數資料
| 型號： | AM28F020A-200JEB |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| 中文描述： | 256K X 8 FLASH 12V PROM, 200 ns, PQCC32 |
| 封裝： | PLASTIC, LCC-32 |
| 文件頁數： | 1/35頁 |
| 文件大小： | 470K |
| 代理商： | AM28F020A-200JEB |
當前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁
FINAL
Publication#
17502
Issue Date:
January 1998
Rev:
D
Amendment/
+1
Am28F020A
2 Megabit (256 K x 8-Bit)
CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
DISTINCTIVE CHARACTERISTICS
I
High performance
— Access times as fast as 70 ns
I
CMOS low power consumption
— 30 mA maximum active current
— 100 μA maximum standby current
— No data retention power consumption
I
Compatible with JEDEC-standard byte-wide
32-pin EPROM pinouts
— 32-pin PDIP
— 32-pin PLCC
— 32-pin TSOP
I
100,000 write/erase cycles minimum
I
Write and erase voltage 12.0 V
±
5%
I
Latch-up protected to 100 mA from
–1 V to V
CC
+1 V
I
Embedded Erase Electrical Bulk Chip Erase
— Five seconds typical chip erase, including
pre-programming
I
Embedded Program
— 14 μs typical byte program, including time-out
— 4 seconds typical chip program
I
Command register architecture for
microprocessor/microcontroller compatible
write interface
I
On-chip address and data latches
I
Advanced CMOS flash memory technology
— Low cost single transistor memory cell
I
Embedded algorithms for completely self-timed
write/erase operations
GENERAL DESCRIPTION
The Am28F020A is a 2 Megabit Flash memory orga-
nized as 256 Kbytes of 8 bits each. AMD’s Flash mem-
ories offer the most cost-effective and reliable read/
write non-volatile random access memory. The
Am28F020A is packaged in 32-pin PDIP, PLCC, and
TSOP versions. It is designed to be reprogrammed and
erased in-system or in standard EPROM programmers.
The Am28F020A is erased when shipped from
the factory.
The standard Am28F020A offers access times of as
fast as 70 ns, allowing high speed microprocessors to
operate without wait states. To eliminate bus conten-
tion, the device has separate chip enable (CE
#
) and
output enable (OE
#
) controls.
AMD’s Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
Am28F020A uses a command register to manage this
functionality. The command register allows for 100%
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining
maximum EPROM compatibility.
The Am28F020A is compatible with the AMD
Am28F256A, Am28F512A, and Am28F010A Flash
memories. All devices in the Am28Fxxx family follow
the JEDEC 32-pin pinout standard. In addition, all
devices within this family that offer Embedded Algo-
rithms use the same command set. This offers
designers the flexibility to retain the same device foot-
print and command set, at any density between
256 Kbits and 2 Mbits.
AMD’s Flash technology reliably stores memory con-
tents even after 100,000 erase and program cycles.
The AMD cell is designed to optimize the erase and
programming mechanisms. In addition, the combina-
tion of advanced tunnel oxide processing and low
internal electric fields for erase and programming oper-
ations produces reliable cycling. The Am28F020A uses
a 12.0
±
5% V
PP
supply input to perform the erase and
programming functions.
The highest degree of latch-up protection is achieved
with AMD’s proprietary non-epi process. Latch-up pro-
tection is provided for stresses up to 100 mA on
address and data pins from –1 V to V
CC
+1 V.
AMD’s Flash technology combines years of EPROM
and EEPROM experience to produce the highest levels
of quality, reliability, and cost effectiveness. The
Am28F020A electrically erases all bits simultaneously
using Fowler-Nordheim tunneling. The bytes are
programmed one byte at a time using the EPROM
programming mechanism of hot electron injection.
相關PDF資料 |
PDF描述 |
|---|---|
| AM28F020A-120ECB | RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA |
| AM28F020A-200EIB | 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F020A-150JE | 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F020A-150JI | 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F020A-150JIB | 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AM28F020A-200JI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F020A-200JIB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F020A-200LC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AM28F020A-200LE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AM28F020A-200LEB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
發布緊急采購，3分鐘左右您將得到回復。