欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號: AM28F256A-120EEB
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
中文描述: 32K X 8 FLASH 12V PROM, 120 ns, PDSO32
封裝: TSOP-32
文件頁數(shù): 1/35頁
文件大小: 456K
代理商: AM28F256A-120EEB
FINAL
Publication#
18879
Issue Date:
May 1998
Rev:
C
Amendment/
+2
Am28F256A
256 Kilobit (32 K x 8-Bit)
CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
DISTINCTIVE CHARACTERISTICS
I
High performance
— Access times as fast as 70 ns
I
CMOS low power consumption
— 30 mA maximum active current
— 100 μA maximum standby current
— No data retention power consumption
I
Compatible with JEDEC-standard byte-wide
32-Pin EPROM pinouts
— 32-pin PDIP
— 32-pin PLCC
— 32-pin TSOP
I
100,000 write/erase cycles minimum
I
Write and erase voltage 12.0 V
±
5%
I
Latch-up protected to 100 mA from –1 V to
V
CC
+1 V
I
Embedded Erase Electrical Bulk Chip-Erase
— 1.5 seconds typical chip-erase including
pre-programming
I
Embedded
Program
— 14 μs typical byte-program including time-out
— 0.5 second typical chip program
I
Command register architecture for
microprocessor/microcontroller compatible
write interface
I
On-chip address and data latches
I
Advanced CMOS flash memory technology
— Low cost single transistor memory cell
I
Embedded
algorithms for completely
self-timed write/erase operations
GENERAL DESCRIPTION
The Am28F256A is a 256 K Flash memory organized
as 32 Kbytes of 8 bits each. AMD’s Flash memories
offer the most cost-effective and reliable read/write
non- volatile random access memory. The Am28F256A
is packaged in 32-pin PDIP, PLCC, and TSOP versions.
It is designed to be reprogrammed and erased in-sys-
tem or in standard EPROM programmers. The
Am28F256A is erased when shipped from the factory.
The standard Am28F256A offers access times as fast
as 70 ns, allowing operation of high-speed micropro-
cessors without wait states. To eliminate bus conten-
tion, the Am28F256A has separate chip enable (CE#)
and output enable (OE#) controls.
AMD’s Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
Am28F256A uses a command register to manage this
functionality, while maintaining a standard JEDEC
Flash Standard 32-pin pinout. The command register
allows for 100% TTL level control inputs and fixed
power supply levels during erase and programming.
AMD’s Flash technology reliably stores memory con-
tents even after 100,000 erase and program cycles.
The AMD cell is designed to optimize the erase and
programming mechanisms. In addition, the combina-
tion of advanced tunnel oxide processing and low inter-
nal electric fields for erase and programming
operations produces reliable cycling. The Am28F256A
uses a 12.0V
±
5% V
PP
high voltage input to perform
the erase
and programming functions.
The highest degree of latch-up protection is achieved
with AMD’s proprietary non-epi process. Latch-up pro-
tection is provided for stresses up to 100 milliamps on
address and data pins from –1 V to V
CC
+1 V.
Embedded Program
The Am28F256A is byte programmable using the
Embedded Programming algorithm. The Embedded
Programming algorithm does not require the system to
time-out or verify the data programmed. The typical
room temperature programming time of the
Am28F256A is one half second.
Embedded Erase
The entire chip is bulk erased using the Embedded
Erase algorithm. The Embedded
Erase algorithm
automatically programs the entire array prior to electrical
erase. The timing and verification of electrical erase are
相關PDF資料
PDF描述
AM28F256A-120EIB 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F256A-120FIB 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F256A-120JC 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F256A-120JCB Octal bus transceivers with open collector outputs 20-PDIP 0 to 70
AM28F256A-120JE 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
相關代理商/技術參數(shù)
參數(shù)描述
AM28F256A-120EI 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F256A-120EIB 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F256A-120FC 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F256A-120FCB 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F256A-120FE 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
主站蜘蛛池模板: 明星| 密山市| 习水县| 陵水| 阳原县| 丹东市| 临夏县| 峨山| 亚东县| 建平县| 塔城市| 安顺市| 综艺| 鹿邑县| 屯留县| 张家川| 剑川县| 东光县| 嘉善县| 涪陵区| 买车| 巍山| 浮山县| 巴彦县| 开化县| 廉江市| 奉节县| 兴仁县| 文安县| 邢台市| 无极县| 铁岭县| 广汉市| 德兴市| 木兰县| 墨竹工卡县| 东丽区| 潼南县| 尚志市| 察哈| 都匀市|