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參數資料
| 型號： | AM29DL322GT70WMIN |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 2M X 16 FLASH 3V PROM, 70 ns, PBGA48 |
| 封裝： | 6 X 12 MM, 0.80 MM PITCH, FBGA-48 |
| 文件頁數： | 1/53頁 |
| 文件大小： | 1448K |
| 代理商： | AM29DL322GT70WMIN |
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ADVANCE INFORMATION
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Publication# 25686
Rev: B Amendment/4
Issue Date: March 26, 2004
Refer to AMD’s Website (www.amd.com) for the latest information.
Am29DL32xG
32 Megabit (4 M x 8-Bit/2 M x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■
Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in other bank
— Zero latency between read and write operations
■
Multiple bank architectures
— Three devices available with different bank sizes
(refer to Table 3)
■
256-byte SecSi
(Secured Silicon) Sector
— Factory locked and identifiable: 16 bytes available for
secure, random factory Electronic Serial Number;
verifiable as factory locked through autoselect
function. ExpressFlash option allows entire sector to
be available for factory-secured data
— Customer lockable: One time programmable. Once
locked, data cannot be changed.
■
Zero Power Operation
— Sophisticated power management circuits reduce
power consumed during inactive periods to nearly
zero
■
Package options
— 63-ball FBGA
— 48-ball FBGA
— 48-pin TSOP
— 64-ball Fortified BGA
■
Top or bottom boot block
■
Manufactured on 0.17 m process technology
■
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash standard
PERFORMANCE CHARACTERISTICS
■
High performance
— Access time as fast 70 ns
— Program time: 4 s/word typical utilizing Accelerate
function
■
Ultra low power consumption (typical values)
— 2 mA active read current at 1 MHz
— 10 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
■
Minimum 1 million erase cycles guaranteed per
sector
■
20 year data retention at 125°C
— Reliable operation for the life of the system
SOFTWARE FEATURES
■
Data Management Software (DMS)
— AMD-supplied software manages data programming,
enabling EEPROM emulation
— Eases historical sector erase flash limitations
■
Supports Common Flash Memory Interface (CFI)
■
Erase Suspend/Erase Resume
— Suspends erase operations to allow programming in
same bank
■
Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
■
Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
HARDWARE FEATURES
■
Any combination of sectors can be erased
■
Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase
cycle completion
■
Hardware reset pin (RESET#)
— Hardware method of resetting the internal state
machine to the read mode
■
WP#/ACC input pin
— Write protect (WP#) function allows protection of two
outermost boot sectors, regardless of sector protect
status
— Acceleration (ACC) function accelerates program
timing
■
Sector protection
— Hardware method of locking a sector, either
in-system or using programming equipment, to
prevent any program or erase operation within that
sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system
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|---|---|
| AM29DL322GT-90EI | 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 3.3V 32M-Bit 4M x 8/2M x 16 90ns 48-Pin TSOP |
| AM29DL323CB-90EI | 制造商:Advanced Micro Devices 功能描述: |
| AM29DL323DB-90EI | 制造商:Advanced Micro Devices 功能描述: |
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