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參數(shù)資料
| 型號： | AM29F016-90SIB |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| 中文描述： | 16兆位（2097152 × 8位）的CMOS 5.0伏只，扇區(qū)擦除閃存 |
| 文件頁數(shù)： | 1/36頁 |
| 文件大小： | 219K |
| 代理商： | AM29F016-90SIB |
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FINAL
Publication#
18805
Issue Date:
April 1997
Rev:
D
Amendment/
0
Am29F016
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only,
Sector Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
I
5.0 Volt
±
10% for read and write operations
— Minimizes system level power requirements
I
Compatible with JEDEC-standards
— Pinout and software compatible with
single-power supply Flash
— Superior inadvertent write protection
I
48-pin TSOP
I
44-pin SO
I
Minimum 100,000 write/erase cycles
guaranteed
I
High performance
— 70 ns maximum access time
I
Sector erase architecture
— Uniform sectors of 64 Kbytes each
— Any combination of sectors can be erased.
Also supports full chip erase
I
Group sector protection
— Hardware method that disables any combination
of sector groups from write or erase operations
(a sector group consists of 4 adjacent sectors of
64 Kbytes each)
I
Embedded Erase Algorithms
— Automatically pre-programs and erases the chip
or any sector
I
Embedded Program Algorithms
— Automatically programs and verifies data at
specified address
I
Data Polling and Toggle Bit feature for
detection of program or erase cycle
completion
I
Ready/Busy output (RY/BY)
— Hardware method for detection of program or
erase cycle completion
I
Erase Suspend/Resume
— Supports
reading or programming
data to a
sector not being erased
I
Low power consumption
— 25 mA typical active read current
— 30 mA typical program/erase current
I
Enhanced power management for standby
mode
— <1
μ
A typical standby current
— Standard access time from standby mode
I
Hardware RESET pin
— Resets internal state machine to the read mode
GENERAL DESCRIPTION
The Am29F016 is a 16 Mbit, 5.0 Volt-only Flash memory
organized as 2 Megabytes of 8 bits each. The 2 Mbytes
of data is divided into 32 sectors of 64 Kbytes for flexible
erase capability. The 8 bits of data appear on DQ0–DQ7.
The Am29F016 is offered in 48-pin TSOP and 44-pin SO
packages. This device is designed to be programmed
in-system with the standard system 5.0 Volt V
CC
supply.
12.0 Volt V
PP
is not required for program or erase
operations. The device can also be reprogrammed in
standard EPROM programmers.
The standard Am29F016 offers access times of 70
ns, 90 ns, 120 ns, and 150 ns, allowing high-speed
microprocessors to operate without wait states. To
eliminate bus contention, the device has separate
chip enable (CE), write enable (WE), and output
enable (OE) controls.
The Am29F016 is entirely command set compatible
with the JEDEC single-power supply Flash standard.
Commands are written to the command register using
standard microprocessor write timings. Register
contents serve as input to an internal state-machine
that controls the erase and programming circuitry.
Write cycles also internally latch addresses and data
needed for the programming and erase operations.
Reading data out of the device is similar to reading
from 12.0 Volt Flash or EPROM devices.
The Am29F016 is programmed by executing the pro-
gram command sequence. This will invoke the Embed-
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| AM29F016-150FI | 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
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| AM29F016-150SC | 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
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| AM29F016-150SI | 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
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| AM29F016B90EC | 制造商:Advanced Micro Devices 功能描述: |
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