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參數資料
| 型號： | AM29F017B |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit（2M*8Bit）CMOS 5.0 Volt-only，uniform sector flash memory |
| 中文描述： | 16兆位（2米× 8位）的CMOS 5.0伏只，統一部門快閃記憶體 |
| 文件頁數： | 1/35頁 |
| 文件大小： | 443K |
| 代理商： | AM29F017B |
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PRELIMINARY
Publication#
21195
Issue Date:
April 1998
Rev:
B
Amendment/
+2
Am29F017B
16 Megabit (2 M x 8-Bit)
CMOS 5.0 Volt-only, Uniform Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
I
Optimized for memory card applications
— Backwards-compatible with the Am29F016C
I
5.0 V
±
10%, single power supply operation
— Minimizes system level power requirements
I
Manufactured on 0.35
μm process technology
I
High performance
— Access times as fast as 70 ns
I
Low power consumption
— 25 mA typical active read current
— 30 mA typical program/erase current
— 1
μ
A typical standby current (standard access
time to active mode)
I
Flexible sector architecture
— 32 uniform sectors of 64 Kbytes each
— Any combination of sectors can be erased.
— Supports full chip erase
— Group sector protection:
A hardware method of locking sector groups to
prevent any program or erase operations within
that sector group
Temporary Sector Group Unprotect allows code
changes in previously locked sectors
I
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies bytes at specified addresses
I
Minimum 1,000,000 program/erase cycles per
sector guaranteed
I
Package options
— 48-pin TSOP
I
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply Flash standard
— Superior inadvertent write protection
I
Data# Polling and toggle bits
— Provides a software method of detecting
program or erase cycle completion
I
Ready/Busy# output (RY/BY#)
— Provides a hardware method for detecting
program or erase cycle completion
I
Erase Suspend/Erase Resume
— Suspends a sector erase operation to read data
from, or program data to, a non-erasing sector,
then resumes the erase operation
I
Hardware reset pin (RESET#)
— Resets internal state machine to the read mode
相關PDF資料 |
PDF描述 |
|---|---|
| Am29F017B-120FIB | 16 Megabit (2 M x 8-Bit)CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F017B-150EC | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| Am29F017B-150ECB | LM3401 Hysteretic PFET Controller for High Power LED Drive; Package: MINI SOIC; No of Pins: 8; Qty per Container: 1000; Container: Reel |
| AM29F017B-150EE | LM3401 Hysteretic PFET Controller for High Power LED Drive; Package: MINI SOIC; No of Pins: 8; Qty per Container: 3500; Container: Reel |
| Am29F017B-150EEB | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AM29F017B-90EC | 制造商:Advanced Micro Devices 功能描述:2M X 8 FLASH 5V PROM, 90 ns, PDSO48 |
| AM29F017B-90FC | 制造商:Advanced Micro Devices 功能描述:2M X 8 FLASH 5V PROM, 90 ns, PDSO48 |
| AM29F017D-120EC | 制造商:Spansion 功能描述:FLASH PARALLEL 5V 16MBIT 2MX8 120NS 48TSOP - Trays |
| AM29F017D-70FI | 制造商:Spansion 功能描述:FLASH PARALLEL 5V 16MBIT 2MX8 70NS 48TSOP - Trays |
| am29f017d-90fc/t | 制造商:Advanced Micro Devices 功能描述: |
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