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參數(shù)資料
| 型號(hào)： | AM29F040B-55EC |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| 中文描述： | 512K X 8 FLASH 5V PROM, 55 ns, PDSO32 |
| 封裝： | MO-142BD, TSOP-32 |
| 文件頁(yè)數(shù)： | 1/35頁(yè) |
| 文件大?。?/td> | 553K |
| 代理商： | AM29F040B-55EC |
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This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
21445
Issue Date:
November 29, 2000
Rev:
E
Amendment/
0
Am29F040B
4 Megabit (512 K x 8-Bit)
CMOS 5.0 Volt-only, Uniform Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
I
5.0 V
±
10% for read and write operations
— Minimizes system level power requirements
I
Manufactured on 0.32
μm process technology
— Compatible with 0.5 μm Am29F040 device
I
High performance
— Access times as fast as 55 ns
I
Low power consumption
— 20 mA typical active read current
— 30 mA typical program/erase current
— 1 μA typical standby current (standard access
time to active mode)
I
Flexible sector architecture
— 8 uniform sectors of 64 Kbytes each
— Any combination of sectors can be erased
— Supports full chip erase
— Sector protection:
A hardware method of locking sectors to prevent
any program or erase operations within that sector
I
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies bytes at specified addresses
I
Minimum 1,000,000 program/erase cycles per
sector guaranteed
I
20-year data retention at 125
°
C
— Reliable operation for the life of the system
I
Package options
— 32-pin PLCC, TSOP, or PDIP
I
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply Flash standard
— Superior inadvertent write protection
I
Data# Polling and toggle bits
— Provides a software method of detecting
program or erase cycle completion
I
Erase Suspend/Erase Resume
— Suspends a sector erase operation to read data
from, or program data to, a non-erasing sector,
then resumes the erase operation
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F040B-120PK | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F040B-120ED | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F040B-120EF | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F040B-120EK | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F040B-120JD | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F040B-55ED | 制造商:Spansion 功能描述:IC FLASH 4MB SMD 29F040 TSOP32 |
| AM29F040B-55EE | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K x 8bit 55ns 32-Pin TSOP |
| AM29F040B-55EF | 功能描述:閃存 4M (512Kx8) 55ns 5v Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AM29F040B-55EI | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K x 8bit 55ns 32-Pin TSOP |
| AM29F040B-55EI\\T | 制造商:Spansion 功能描述: |
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