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參數資料
| 型號： | AM29F080B-150EIB |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| 中文描述： | 1M X 8 FLASH 5V PROM, 150 ns, PDSO40 |
| 封裝： | TSOP-40 |
| 文件頁數： | 1/37頁 |
| 文件大小： | 451K |
| 代理商： | AM29F080B-150EIB |
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PRELIMINARY
Publication#
21503
Issue Date:
April 1998
Rev:
C
Amendment/
+1
Am29F080B
8 Megabit (1 M x 8-Bit)
CMOS 5.0 Volt-only, Uniform Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
I
5.0 V
±
10%, single power supply operation
— Minimizes system level power requirements
I
Manufactured on 0.35
μm process technology
— Compatible with 0.5 μm Am29F080 device
I
High performance
— Access times as fast as 70 ns
I
Low power consumption
— 25 mA typical active read current
— 30 mA typical program/erase current
— 1 μA typical standby current (standard access
time to active mode)
I
Flexible sector architecture
— 16 uniform sectors of 64 Kbytes each
— Any combination of sectors can be erased.
— Supports full chip erase
— Group sector protection:
A hardware method of locking sector groups to
prevent any program or erase operations within
that sector group
Temporary Sector Group Unprotect allows code
changes in previously locked sectors
I
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies bytes at specified addresses
I
Minimum 1,000,000 program/erase cycles per
sector guaranteed
I
Package options
— 40-pin TSOP
— 44-pin SO
I
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply Flash standard
— Superior inadvertent write protection
I
Data# Polling and toggle bits
— Provides a software method of detecting
program or erase cycle completion
I
Ready/Busy# output (RY/BY#)
— Provides a hardware method for detecting
program or erase cycle completion
I
Erase Suspend/Erase Resume
— Suspends a sector erase operation to read data
from, or program data to, a non-erasing sector,
then resumes the erase operation
I
Hardware reset pin (RESET#)
— Resets internal state machine to the read mode
相關PDF資料 |
PDF描述 |
|---|---|
| AM29F080B-150FC | 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F080B-150FCB | 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F080B-150FI | 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F080B-150FIB | 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F100B-120DGI1 | 1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AM29F080B-55EF | 功能描述:閃存 8M (1MX8) 55ns 5v Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AM29F080B-70EC | 制造商:Spansion 功能描述:IC,EEPROM,NOR FLASH,1MX8,CMOS,TSSOP,40PIN,PLASTIC |
| AM29F080B-70EF | 功能描述:閃存 8M (1MX8) 70ns 5v Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AM29F080B-70SF | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M x 8bit 70ns 44-Pin SO |
| AM29F080B-75EF | 制造商:Spansion 功能描述:8 MEGABIT 1 M X 8-BIT CMOS 5.0 VOLT-ONLY, UNIFORM SECTOR FLASH MEMORY |
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