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參數資料
| 型號： | Am29F100B-120DTE |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 |
| 中文描述： | 1兆位（128畝x 8-Bit/64畝x 16位），5.0伏的CMOS只，引導扇區快閃記憶體模修訂1 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 57K |
| 代理商： | AM29F100B-120DTE |
SUPPLEMENT
Publication# 21235
Rev: B Amendment/0
Issue Date: January 1998
Am29F100 Known Good Die
1 Megabit (128 K x 8-Bit/64 K x 16-Bit)
CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
s Single power supply operation
—5.0 V
± 10% for read, erase, and program
operations
— Simplifies system-level power requirements
s High performance
— 120 ns maximum access time
s Low power consumption
— 20 mA typical active read current for byte mode
— 28 mA typical active read current for word mode
— 30 mA typical program/erase current
— 25
A typical standby current
s Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
one 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
one 32 Kword sectors (word mode)
— Any combination of sectors can be erased
— Supports full chip erase
s Top or bottom boot block configurations
available
s Sector protection
— Hardware-based feature that disables/re-
enables program and erase operations in any
combination of sectors
— Sector protection/unprotection can be
implemented using standard PROM
programming equipment
— Temporary Sector Unprotect feature allows in-
system code changes in protected sectors
s Embedded Algorithms
— Embedded Erase algorithm automatically
pre-programs and erases the chip or any
combination of designated sector
— Embedded Program algorithm automatically
programs and verifies data at specified address
s Minimum 100,000 program/erase cycles
guaranteed
s Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash
— Superior inadvertent write protection
s Data Polling and Toggle Bits
— Provides a software method of detecting
program or erase cycle completion
s Ready/Busy pin (RY/BY#)
— Provides a hardware method for detecting
program or erase cycle completion
s Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
s Hardware RESET# pin
— Hardware method of resetting the device to
reading array data
s Tested to datasheet specifications at
temperature
s Quality and reliability levels equivalent to
standard packaged components
相關PDF資料 |
PDF描述 |
|---|---|
| Am29F100B-120DTI | 1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 |
| AM29F100B-120DWE1 | 1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 |
| Am29F100B-120DWI | Hex Inverters With Open-Drain Outputs 14-SOIC -40 to 85 |
| AM29F100B-120EC | Hex Inverters With Open-Drain Outputs 14-SSOP -40 to 85 |
| AM29F100B-120ECB | Hex Inverters With Open-Drain Outputs 14-SSOP -40 to 85 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AM29F100B120EC | 制造商:AMD 功能描述:* |
| AM29F100B-120EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F100B120SC | 制造商:AMD 功能描述:New |
| AM29F100B-120SC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 64K x 16, 44 Pin, Plastic, SOP |
| AM29F100B90SIT | 制造商:AMD 功能描述:New |
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