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參數(shù)資料
| 型號： | Am29F100T-120DWE |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 |
| 中文描述： | 1兆位（128畝x 8-Bit/64畝x 16位），5.0伏的CMOS只，引導(dǎo)扇區(qū)快閃記憶體模修訂1 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 57K |
| 代理商： | AM29F100T-120DWE |
SUPPLEMENT
Publication#
21235
Issue Date:
January 1998
Rev:
B
Amendment/
0
Am29F100 Known Good Die
1 Megabit (128 K x 8-Bit/64 K x 16-Bit)
CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
I
Single power supply operation
— 5.0 V
±
10% for read, erase, and program
operations
— Simplifies system-level power requirements
I
High performance
— 120 ns maximum access time
I
Low power consumption
— 20 mA typical active read current for byte mode
— 28 mA typical active read current for word mode
— 30 mA typical program/erase current
— 25
μ
A typical standby current
I
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
one 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
one 32 Kword sectors (word mode)
— Any combination of sectors can be erased
— Supports full chip erase
I
Top or bottom boot block configurations
available
I
Sector protection
— Hardware-based feature that disables/re-
enables program and erase operations in any
combination of sectors
— Sector protection/unprotection can be
implemented using standard PROM
programming equipment
— Temporary Sector Unprotect feature allows in-
system code changes in protected sectors
I
Embedded Algorithms
— Embedded Erase algorithm automatically
pre-programs and erases the chip or any
combination of designated sector
— Embedded Program algorithm automatically
programs and verifies data at specified address
I
Minimum 100,000 program/erase cycles
guaranteed
I
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash
— Superior inadvertent write protection
I
Data Polling and Toggle Bits
— Provides a software method of detecting
program or erase cycle completion
I
Ready/Busy pin (RY/BY#)
— Provides a hardware method for detecting
program or erase cycle completion
I
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
I
Hardware RESET# pin
— Hardware method of resetting the device to
reading array data
I
Tested to datasheet specifications at
temperature
I
Quality and reliability levels equivalent to
standard packaged components
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F100T-120EC | 1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| AM29F100T-120ECB | 1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| Am29F100B-120DWC | 1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 |
| AM29F100B-120DWC1 | 1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 |
| AM29F100B-120EEB | 1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F100T-120EC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 64K x 16, 48 Pin, Plastic, TSSOP |
| AM29F100T120SI | 制造商:AMD 功能描述:NEW |
| AM29F100T-70EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F160DB-120EC | 制造商:Spansion 功能描述:16M (2MX8/1MX16) 5V, BOOT BLOCK, BOT, TSOP48, COM - Trays |
| AM29F160DB-120EI | 制造商:Spansion 功能描述:16M (2MX8/1MX16) 5V, BOOT BLOCK, BOT, TSOP48, IND - Trays |
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