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參數資料
| 型號： | AM29F200AB-120DPI1 |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | M39012 MIL RF CONNECTOR |
| 中文描述： | 256K X 8 FLASH 5V PROM, 120 ns, UUC42 |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 118K |
| 代理商： | AM29F200AB-120DPI1 |
SUPPLEMENT
1/13/98
Publication#
21257
Issue Date:
December 1997
Rev:
B
Amendment/
0
Am29F200A Known Good Die
2 Megabit (256 K x 8-Bit/128 K x 16-Bit)
CMOS 5.0 Volt-only, Sectored Flash Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
I
5.0 V
±
10% for read and write operations
— Minimizes system level power requirements
I
High performance
— 90 or 120 ns access time
I
Low power consumption
— 20 mA typical active read current (byte mode)
— 28 mA typical active read current for
(word mode)
— 30 mA typical program/erase current
— 1
μ
A typical standby current
I
Sector erase architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
three 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
three 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked via programming
equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
I
Top or bottom boot block configurations
available
I
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
I
Minimum 100,000 write/erase cycles guaranteed
I
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash
— Superior inadvertent write protection
I
Data# Polling and Toggle Bit
— Detects program or erase cycle completion
I
Ready/Busy# output (RY/BY#)
— Hardware method for detection of program or
erase cycle completion
I
Erase Suspend/Resume
— Supports reading data from a sector not being
erased
I
Hardware RESET# pin
— Resets internal state machine to the reading
array data
I
Tested to datasheet specifications at
temperature
I
Quality and reliability levels equivalent to
standard packaged components
相關PDF資料 |
PDF描述 |
|---|---|
| Am29F200AT-120DGC | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 |
| AM29F200AT-120DGC1 | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 |
| Am29F200AT-120DGE | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 |
| AM29F200AT-120DGE1 | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 |
| Am29F200AT-120DGI | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AM29F200AB-90SC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 128K x 16, 44 Pin, Plastic, SOP |
| AM29F200AB90SI | 制造商:AMD 功能描述:NEW |
| AM29F200AT-120EC | 制造商:Advanced Micro Devices 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 120ns 48-Pin TSOP |
| AM29F200AT55EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F200AT70SI | 制造商:AMD 功能描述:* |
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