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參數資料
| 型號： | AM29F200BT-70 |
| 廠商： | Advanced Micro Devices, Inc. |
| 元件分類： | DC/DC變換器 |
| 英文描述： | RP Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 24V; Power: 1W; Pot-Core Transformer - separated windings; High 5.2kVDC Isolation in compact size; Optional Continuous Short Circuit Protected; Pin Compatible with RH & RK Series; Approved for Medical Applications; UL and EN Safety Approvals; Efficiency to 82% |
| 中文描述： | 2兆位（256畝x 8-Bit/128畝x 16位），5.0伏的CMOS只，引導扇區閃存 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 118K |
| 代理商： | AM29F200BT-70 |
SUPPLEMENT
1/13/98
Publication#
21257
Issue Date:
December 1997
Rev:
B
Amendment/
0
Am29F200A Known Good Die
2 Megabit (256 K x 8-Bit/128 K x 16-Bit)
CMOS 5.0 Volt-only, Sectored Flash Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
I
5.0 V
±
10% for read and write operations
— Minimizes system level power requirements
I
High performance
— 90 or 120 ns access time
I
Low power consumption
— 20 mA typical active read current (byte mode)
— 28 mA typical active read current for
(word mode)
— 30 mA typical program/erase current
— 1
μ
A typical standby current
I
Sector erase architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
three 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
three 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked via programming
equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
I
Top or bottom boot block configurations
available
I
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
I
Minimum 100,000 write/erase cycles guaranteed
I
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash
— Superior inadvertent write protection
I
Data# Polling and Toggle Bit
— Detects program or erase cycle completion
I
Ready/Busy# output (RY/BY#)
— Hardware method for detection of program or
erase cycle completion
I
Erase Suspend/Resume
— Supports reading data from a sector not being
erased
I
Hardware RESET# pin
— Resets internal state machine to the reading
array data
I
Tested to datasheet specifications at
temperature
I
Quality and reliability levels equivalent to
standard packaged components
相關PDF資料 |
PDF描述 |
|---|---|
| AM29F200AB-120DWE1 | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 |
| Am29F200AB-120DWI | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 |
| AM29F200B | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| AM29F200BB-120 | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| AM29F200BB-50 | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AM29F200BT-70EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F200BT-70EF | 功能描述:閃存 2M (256KX8/128KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AM29F200BT-70EF\T | 功能描述:閃存 IC 2M FLSH,256K X 16 TOP SCTR RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AM29F200BT-70SC | 制造商: 功能描述: 制造商:undefined 功能描述: |
| AM29F200BT-70SF | 功能描述:閃存 2M (256KX8/128KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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