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參數資料
型號: AM29F200BT-90DTH1
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 256K X 8 FLASH 5V PROM, 90 ns, UUC42
文件頁數: 1/10頁
文件大小: 237K
代理商: AM29F200BT-90DTH1
SUPPLEMENT
Publication#
21257
Issue Date:
July 12, 1999
Rev:
D
Amendment/
+2
Am29F200B Known Good Die
2 Megabit (256 K x 8-Bit/128 K x 16-Bit)
CMOS 5.0 Volt-only, Sectored Flash Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
I
5.0 V
±
10% for read and write operations
— Minimizes system level power requirements
I
Manufactured on 0.32 μm process technology
— Compatible with 0.5 μm Am29F200A device
I
High performance
— 70, 90, or 120 ns access time
I
Low power consumption
— 20 mA typical active read current (byte mode)
— 28 mA typical active read current for
(word mode)
— 30 mA typical program/erase current
— 1 μA typical standby current
I
Sector erase architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
three 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
three 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to prevent
any program or erase operations within that
sector
Sectors can be locked via programming
equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
I
Top or bottom boot block configurations
available
I
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
I
Minimum 1,000,000 write/erase cycles
guaranteed
I
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash
— Superior inadvertent write protection
I
Data# Polling and Toggle Bit
— Detects program or erase cycle completion
I
Ready/Busy# output (RY/BY#)
— Hardware method for detection of program or
erase cycle completion
I
Erase Suspend/Resume
— Supports reading data from a sector not being
erased
I
Hardware RESET# pin
— Resets internal state machine to the reading
array data
I
20-year data retention at 125
°
C
I
Tested to datasheet specifications at
temperature
— High temperature range (–55
°
C to +140
°
C)
available
I
Quality and reliability levels equivalent to
standard packaged components
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AM29LV102BB-120EI 256K X 8 FLASH 3V PROM, 120 ns, PDSO32
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相關代理商/技術參數
參數描述
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