- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366445 > Am29F800BB-90DGC (Advanced Micro Devices, Inc.) 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 PDF資料下載
參數(shù)資料
| 型號(hào)： | Am29F800BB-90DGC |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 |
| 中文描述： | 8兆位（1 M中的x 8-Bit/512畝x 16位），5.0伏的CMOS只，引導(dǎo)扇區(qū)快閃記憶體模修訂1 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 207K |
| 代理商： | AM29F800BB-90DGC |
SUPPLEMENT
5/4/98
Publication#
21631
Issue Date:
April 1998
Rev:
A
Amendment/
+2
Am29F800B Known Good Die
8 Megabit (1 M x 8-Bit/512 K x 16-Bit)
CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
I
Single power supply operation
— 5.0 Volt-only operation for read, erase, and
program operations
— Minimizes system level requirements
I
Manufactured on 0.35 μm process technology
— Compatible with 0.5 μm Am29F800 device
I
High performance
— 90 or 120 ns access time
I
Low power consumption (typical values at 5
MHz)
— 1
μ
A standby mode current
— 20 mA read current (byte mode)
— 28 mA read current (word mode)
— 30 mA program/erase current
I
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
fifteen 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
fifteen 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked via programming
equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
I
Top or bottom boot block configurations
available
I
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
I
Minimum 1,000,000 write cycles per sector
guaranteed
I
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power-supply Flash
— Superior inadvertent write protection
I
Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
I
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
I
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
I
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Am29F800BT-120DPC | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 |
| AM29F800BT-120EC | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| Am29F800BB-120EEB | LM3410/LM3410Q 525kHz/1.6MHz, Constant Current Boost and SEPIC LED Driver with Internal Compensation; Package: MINI SOIC EXP PAD; No of Pins: 8; Qty per Container: 3500; Container: Reel |
| AM29F800BB-120EI | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| AM29L116ADC | High-Performance 16-Bit Bipolar Microprocessors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F800BB-90EC | 制造商:Spansion 功能描述:8M CMOS FLASH 5V |
| AM29F800BB-90EC\T | 制造商:Spansion 功能描述:Flash Mem Parallel 5V 8M-Bit 1M x 8/512K x 16 90ns 48-Pin TSOP T/R |
| AM29F800BB-90ED | 制造商:Spansion 功能描述:FLASH BOTTOM BLOCK 8MB SMD 29F800 |
| AM29F800BB-90EI\T | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M/512K x 8bit/16bit 90ns 48-Pin TSOP T/R |
| AM29F800BB-90SD | 制造商:Spansion 功能描述:FLASH BOTTOM BLOCK 8MB SMD 29F800 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。