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參數資料
| 型號： | Am29F800BT-55FEB |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 8兆位（1 M中的x 8-Bit/512畝x 16位），5.0伏的CMOS只，引導扇區閃存 |
| 文件頁數： | 1/39頁 |
| 文件大小： | 518K |
| 代理商： | AM29F800BT-55FEB |
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PRELIMINARY
Publication# 21504
Rev: C Amendment/+1
Issue Date: April 1998
Am29F800B
8 Megabit (1 M x 8-Bit/512 K x 16-Bit)
CMOS 5.0 Volt-only, Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
s Single power supply operation
— 5.0 Volt-only operation for read, erase, and
program operations
— Minimizes system level requirements
s Manufactured on 0.35 m process technology
— Compatible with 0.5 m Am29F800 device
s High performance
— Access times as fast as 55 ns
s Low power consumption (typical values at 5
MHz)
— 1 A standby mode current
— 20 mA read current (byte mode)
— 28 mA read current (word mode)
— 30 mA program/erase current
s Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
fifteen 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
fifteen 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked via programming
equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
s Top or bottom boot block configurations
available
s Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
s Minimum 1,000,000 program/erase cycles per
sector guaranteed
s Package option
— 48-pin TSOP
— 44-pin SO
s Compatibility with JEDEC standards
— Pinout and software compatible with single-
power-supply Flash
— Superior inadvertent write protection
s Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
s Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
s Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
s Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
相關PDF資料 |
PDF描述 |
|---|---|
| Am29F800BB-55FEB | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| Am29LV010BB-55FEB | 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
| Am29F800BT-55FIB | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| Am29F800BB-55FIB | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| Am29LV010BB-55FIB | 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AM29F800BT-55SF | 功能描述:閃存 8M (1MX8/512KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AM29F800BT-55SI | 制造商:Spansion 功能描述:FLASH PARALLEL 5V 8MBIT 1MX8/512KX16 55NS 44SOIC - Rail/Tube |
| AM29F800BT70EC | 制造商:AMD 功能描述:NEW |
| AM29F800BT-70EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F800BT-70ED | 制造商:Spansion 功能描述:IC SM FLASH 5V 8MB |
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