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參數(shù)資料
| 型號(hào)： | AM29F800BT-90DGC1 |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 |
| 中文描述： | 1M X 8 FLASH 5V PROM, 90 ns, UUC44 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 207K |
| 代理商： | AM29F800BT-90DGC1 |
SUPPLEMENT
5/4/98
Publication# 21631
Rev: A Amendment/+2
Issue Date: April 1998
Am29F800B Known Good Die
8 Megabit (1 M x 8-Bit/512 K x 16-Bit)
CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
s Single power supply operation
— 5.0 Volt-only operation for read, erase, and
program operations
— Minimizes system level requirements
s Manufactured on 0.35 m process technology
— Compatible with 0.5 m Am29F800 device
s High performance
— 90 or 120 ns access time
s Low power consumption (typical values at 5
MHz)
—1
A standby mode current
— 20 mA read current (byte mode)
— 28 mA read current (word mode)
— 30 mA program/erase current
s Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
fifteen 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
fifteen 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked via programming
equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
s Top or bottom boot block configurations
available
s Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
s Minimum 1,000,000 write cycles per sector
guaranteed
s Compatibility with JEDEC standards
— Pinout and software compatible with single-
power-supply Flash
— Superior inadvertent write protection
s Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
s Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
s Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
s Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
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| AM29F800BB-90DGC1 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 |
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| Am29LV641DH90REE | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
| AM29F800BT-90DPC1 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 |
| AM29F800BB-90DPC1 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 |
相關(guān)代理商/技術(shù)參數(shù) |
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| AM29F800BT-90DPE 2 | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M/512K x 8bit/16bit 90ns Die |
| AM29F800BT90DPE2 | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M/512K x 8bit/16bit 90ns Die |
| AM29F800BT-90EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F800BT-90ED | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M/512K x 8bit/16bit 90ns 48-Pin TSOP 制造商:Spansion 功能描述:IC SM FLASH 5V 8MB |
| AM29F800BT-90ED | 制造商:Spansion 功能描述:FLASH MEMORY IC |
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