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參數資料
| 型號： | Am29LL800BT-200SIB |
| 廠商： | Advanced Micro Devices, Inc. |
| 元件分類： | DC/DC變換器 |
| 英文描述： | RP Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 09V; Power: 1W; Pot-Core Transformer - separated windings; High 5.2kVDC Isolation in compact size; Optional Continuous Short Circuit Protected; Pin Compatible with RH & RK Series; Approved for Medical Applications; UL and EN Safety Approvals; Efficiency to 82% |
| 中文描述： | 8兆位（1 M中的x 8-Bit/512畝x 16位），2.2伏的CMOS只引導扇區閃存 |
| 文件頁數： | 1/40頁 |
| 文件大小： | 534K |
| 代理商： | AM29LL800BT-200SIB |
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ADVANCE INFORMATION
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Refer to AMD’s Website (www.amd.com) for the latest information.
Publication#
21518
Issue Date:
March 1998
Rev:
A
Amendment/
+3
Am29LL800B
8 Megabit (1 M x 8-Bit/512 K x 16-Bit)
CMOS 2.2 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
I
Single power supply operation
— 2.2 to 2.7 volt read and write operations for
battery-powered applications
I
Manufactured on 0.35 μm process technology
— Compatible with 0.5 μm Am29LL800 device
I
High performance
— Access times as fast as 150 ns
I
Ultra low power consumption (typical values at
5 MHz)
— 75 nA Automatic Sleep mode current
— 75 nA standby mode current
— 7 mA read current
— 15 mA program/erase current
I
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
fifteen 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
fifteen 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
I
Unlock Bypass Program Command
— Reduces overall programming time when
issuing multiple program command sequences
I
Top or bottom boot block configurations
available
I
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
I
Minimum 1,000,000 write cycle guarantee per
sector
I
Package option
— 48-pin TSOP
— 44-pin SO
I
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
I
Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
I
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
I
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
I
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
相關PDF資料 |
PDF描述 |
|---|---|
| Am29LL800BT-150FCB | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash Memory |
| AM29LL800BT-150FI | 5V High-Speed RS-232 Transceivers with 0.1uF Capacitors |
| Am29LL800BT-150FIB | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash Memory |
| AM29LL800BT-150SC | Quadruple Bus Buffer Gates With 3-State Outputs 14-SSOP -40 to 85 |
| Am29LL800BT-150SCB | Quadruple Bus Buffer Gates With 3-State Outputs 14-SSOP -40 to 85 |
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| AM29LV001BB-55JC | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 1M-Bit 128K x 8 55ns 32-Pin PLCC |
| AM29LV001BB-70ED | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 1MBIT 128KX8 70NS 32TSOP - Trays |
| AM29LV001BB-90JD | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 1MBIT 128KX8 90NS 32PLCC - Rail/Tube |
| AM29LV001BT-55ED | 制造商:Spansion 功能描述:1M (128KX8) 3V, BOOT BLOCK, TOP, TSOP32, COM - Trays |
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