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參數資料
| 型號： | AM29LV001BT-70EC |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 128K X 8 FLASH 3V PROM, 70 ns, PDSO32 |
| 封裝： | MO-142B, TSOP-32 |
| 文件頁數： | 1/38頁 |
| 文件大小： | 453K |
| 代理商： | AM29LV001BT-70EC |
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PRELIMINARY
Publication#
21557
Issue Date:
April 1998
Rev:
C
Amendment/
0
Am29LV001B
1 Megabit (128 K x 8-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
I
Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
— Regulated voltage range: 3.0 to 3.6 volt read and
write operations and for compatibility with high
performance 3.3 volt microprocessors
I
Manufactured on 0.35 μm process technology
I
High performance
— Full voltage range: access times as fast as 55 ns
— Regulated voltage range: access times as fast
as 45 ns
I
Ultra low power consumption (typical values at
5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
— 15 mA program/erase current
I
Flexible sector architecture
— One 8 Kbyte, two 4 Kbyte, and seven 16 Kbyte
— Supports full chip erase
— Sector Protection features:
Hardware method of locking a sector to prevent
any program or erase operations within that
sector
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
I
Unlock Bypass Mode Program Command
— Reduces overall programming time when
issuing multiple program command sequences
I
Top or bottom boot block configurations
available
I
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
I
Minimum 1,000,000 write cycle guarantee per
sector
I
Package option
— 32-pin TSOP
— 32-pin PLCC
I
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
I
Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
I
Erase Suspend/Erase Resume
— Supports reading data from or programming
data to a sector that is not being erased
I
Hardware reset pin (RESET#)
— Hardware method for resetting the device to
reading array data
相關PDF資料 |
PDF描述 |
|---|---|
| AM29LV001BB-55FCB | 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV001BB-55FE | Quadruple Bus Buffer Gates With 3-State Outputs 14-TVSOP -40 to 85 |
| AM29LV001BB-55FI | Quadruple Bus Buffer Gates With 3-State Outputs 14-TVSOP -40 to 85 |
| AM29LV001BB-45REC | 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV001BB-45RECB | 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AM29LV002BB-90EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV002BT-90EF | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 2Mbit 256K x 8bit 90ns 40-Pin TSOP |
| AM29LV002BT-90EI\\T | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 2MBIT 256KX8 90NS 40TSOP - Tape and Reel |
| AM29LV002BT-90EI\T | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 2MBIT 256KX8 90NS 40TSOP - Tape and Reel |
| AM29LV002T-120EC | 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 3V/3.3V 2M-Bit 256K x 8 120ns 40-Pin TSOP |
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