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參數(shù)資料
| 型號： | Am29LV002B-100ECB |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 2兆位（256畝× 8位），3.0伏的CMOS只，引導扇區(qū)閃存 |
| 文件頁數(shù)： | 1/34頁 |
| 文件大小： | 448K |
| 代理商： | AM29LV002B-100ECB |
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PRELIMINARY
.
Publication#
21191
Issue Date:
March 1998
Rev:
C
Amendment/
+2
1
Am29LV002
2 Megabit (256 K x 8-Bit)
CMOS 3.0 Volt-only, Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
I
Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
— Regulated voltage range: 3.0 to 3.6 volt read
and write operations and for compatibility with
high performance 3.3 volt microprocessors
I
High performance
— Full voltage range: access times as fast as 100
ns
— Regulated voltage range: access times as fast
as 90 ns
I
Ultra low power consumption (typical values at
5 MHz)
— Automatic Sleep Mode: 200 nA
— Standby mode: 200 nA
— Read mode: 10 mA
— Program/erase mode: 20 mA
I
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
three 64 Kbyte sectors
— Supports control code and data storage on a
single device
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
I
Top or bottom boot block configurations
available
I
Embedded Algorithms
— Embedded Erase algorithms automatically
preprogram and erase the entire chip or any
combination of designated sectors
— Embedded Program algorithms automatically
write and verify bytes or words at specified
addresses
I
Typical 1,000,000 write cycles per sector
(100,000 cycles minimum guaranteed)
I
Package option
— 40-pin TSOP
I
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
I
Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
I
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
I
Erase Suspend/Erase Resume feature
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
I
Hardware reset pin (RESET#)
— Hardware method to reset the device to the read
mode
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PDF描述 |
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| Am29LV002B-100EE | 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| Am29LV002B-100EEB | 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| AM29LV002B-100EI | 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| Am29LV002B-100EIB | 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| AM29LV002B-100FC | 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV002BB-90EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV002BT-90EF | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 2Mbit 256K x 8bit 90ns 40-Pin TSOP |
| AM29LV002BT-90EI\\T | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 2MBIT 256KX8 90NS 40TSOP - Tape and Reel |
| AM29LV002BT-90EI\T | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 2MBIT 256KX8 90NS 40TSOP - Tape and Reel |
| AM29LV002T-120EC | 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 3V/3.3V 2M-Bit 256K x 8 120ns 40-Pin TSOP |
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