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參數資料
| 型號： | AM29LV002T-120EEB |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 256K X 8 FLASH 3V PROM, 120 ns, PDSO40 |
| 封裝： | TSOP-40 |
| 文件頁數： | 1/34頁 |
| 文件大小： | 448K |
| 代理商： | AM29LV002T-120EEB |
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PRELIMINARY
.
Publication#
21191
Issue Date:
March 1998
Rev:
C
Amendment/
+2
1
Am29LV002
2 Megabit (256 K x 8-Bit)
CMOS 3.0 Volt-only, Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
I
Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
— Regulated voltage range: 3.0 to 3.6 volt read
and write operations and for compatibility with
high performance 3.3 volt microprocessors
I
High performance
— Full voltage range: access times as fast as 100
ns
— Regulated voltage range: access times as fast
as 90 ns
I
Ultra low power consumption (typical values at
5 MHz)
— Automatic Sleep Mode: 200 nA
— Standby mode: 200 nA
— Read mode: 10 mA
— Program/erase mode: 20 mA
I
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
three 64 Kbyte sectors
— Supports control code and data storage on a
single device
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
I
Top or bottom boot block configurations
available
I
Embedded Algorithms
— Embedded Erase algorithms automatically
preprogram and erase the entire chip or any
combination of designated sectors
— Embedded Program algorithms automatically
write and verify bytes or words at specified
addresses
I
Typical 1,000,000 write cycles per sector
(100,000 cycles minimum guaranteed)
I
Package option
— 40-pin TSOP
I
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
I
Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
I
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
I
Erase Suspend/Erase Resume feature
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
I
Hardware reset pin (RESET#)
— Hardware method to reset the device to the read
mode
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| AM29LV002B-90REC | 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| AM29LV002T-90REC | 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| Am29LV002T-90RFEB | 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| Am29LV002B-90RFEB | 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| AM29LV002B-120FEB | Ceramic Conformally Coated / Radial 'Standard & High Voltage Golden Max'; Capacitance [nom]: 18pF; Working Voltage (Vdc)[max]: 1000V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic, Conformally Coated; Temperature Coefficient: C0G (NP0); Lead Style: Radial Leaded; Lead Dimensions: 0.100" Lead Spacing; Body Dimensions: 0.150" x 0.210" x 0.130"; Container: Bag; Qty per Container: 500 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AM29LV004BB-120EC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 512K x 8, 40 Pin, Plastic, TSSOP |
| AM29LV004BB-120EI | 制造商:Rochester Electronics LLC 功能描述: 制造商:Advanced Micro Devices 功能描述:NOR Flash, 512K x 8, 40 Pin, Plastic, TSSOP |
| AM29LV004BB120EI\T | 制造商:Advanced Micro Devices 功能描述:4 Mb (512K x 8) Boot Sector, Flash Memory |
| AM29LV004BB-120EIT | 制造商:Rochester Electronics LLC 功能描述: 制造商:Advanced Micro Devices 功能描述: |
| am29lv004bt-120ed | 制造商:Advanced Micro Devices 功能描述: |
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