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參數(shù)資料
型號: AM29LV033MUU112REI
廠商: Advanced Micro Devices, Inc.
英文描述: 32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
中文描述: 32兆位(4個(gè)M × 8位)的MirrorBit 3.0伏特,只有統(tǒng)一閃存部門與VersatileI / O控制
文件頁數(shù): 1/56頁
文件大小: 1138K
代理商: AM29LV033MUU112REI
ADVANCE INFORMATION
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
26519
Issue Date:
November 11, 2002
Rev:
A
Amendment/
+2
Refer to AMD’s Website (www.amd.com) for the latest information.
Am29LV033MU
32 Megabit (4 M x 8-Bit) MirrorBit
3.0 Volt-only
Uniform Sector Flash Memory with VersatileI/O
Control
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
Single power supply operation
— 3 volt read, erase, and program operations
VersatileI/O
control
— Device generates and tolerates data voltages on CE#
and DQ inputs/outputs as determined by the voltage
on the V
IO
pin; operates from 1.65 to 3.6 V
Manufactured on 0.23 μm MirrorBit process
technology
SecSi
(Secured Silicon) Sector region
— 256-byte sector for permanent, secure identification
through an 16-byte random Electronic Serial Number,
accessible through a command sequence
— May be programmed and locked at the factory or by
the customer
Flexible sector architecture
— Sixty-four 64 Kbyte sectors
Compatibility with JEDEC standards
— Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
Minimum 100,000 erase cycle guarantee per sector
20-year data retention at 125
°
C
PERFORMANCE CHARACTERISTICS
High performance
— 90 ns access time
— 25 ns page read times
— 0.4 s typical sector erase time
— 3.0 μs typical write buffer byte programming time:
32-byte write buffer reduces overall programming
time for multiple-byte updates
— 8-byte read page buffer
— 32-byte write buffer
Low power consumption (typical values at 3.0 V,
5 MHz)
— 30 mA typical initial Page read current; 10 mA typical
intra-Page read current
— 50 mA typical erase/program current
— 1 μA typical standby mode current
Package options
— 40-pin TSOP
— 48-ball FBGA
SOFTWARE & HARDWARE FEATURES
Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-byte programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
Hardware features
— Sector Group Protection: hardware method of
preventing write operations within a sector group
— Temporary Sector Unprotect: V
ID
-level method of
changing code in locked sectors
— ACC (high voltage) pin accelerates programming
time for higher throughput during system production
— Hardware reset pin (RESET#) resets device
— Ready/Busy# pin (RY/BY#) detects program or erase
cycle completion
相關(guān)PDF資料
PDF描述
AM29LV033MUU112RWCI 32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
AM29LV033MUU120EI 32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
AM29LV033MUU120FI 32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
AM29LV033MUU120REI 32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
AM29LV033MUU120RFI 32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
相關(guān)代理商/技術(shù)參數(shù)
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AM29LV040B-120EC\\T 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 4MBIT 512KX8 120NS 32TSOP - Tape and Reel
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