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參數資料
型號: AM29LV065MU120WHI
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 64 Megabit (8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
中文描述: 8M X 8 FLASH 3V PROM, 120 ns, PBGA63
封裝: 12 X 11 MM, 0.80 MM PITCH, FBGA-63
文件頁數: 1/11頁
文件大小: 499K
代理商: AM29LV065MU120WHI
ADVANCE INFORMATION
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
25262
Issue Date:
October 3, 2001
Rev:
A
Amendment/
+1
Refer to AMD’s Website (www.amd.com) for the latest information.
Am29LV065M
64 Megabit (8 M x 8-Bit) MirrorBit
3.0 Volt-only
Uniform Sector Flash Memory with VersatileI/O
Control
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
I
Single power supply operation
3 volt read, erase, and program operations
I
Enhanced VersatileI/O
control
Device generates data output voltages and tolerates
data input voltages as determined by the voltage on
the V
IO
pin; operates from 1.65 to 3.6 V
I
Manufactured on 0.23 μm MirrorBit process
technology
I
SecSi
(Secured Silicon) Sector region
256-byte sector for permanent, secure identification
through an 16-byte random Electronic Serial Number,
accessible through a command sequence
May be programmed and locked at the factory or by
the customer
I
Flexible sector architecture
One hundred twenty-eight 64 Kbyte sectors
I
Compatibility with JEDEC standards
Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
I
Minimum 100,000 erase cycle guarantee per sector
I
20-year data retention at 125
°
C
PERFORMANCE CHARACTERISTICS
I
High performance
90 ns access time
25 ns page read times
0.4 s typical sector erase time
3.0 μs typical write buffer byte programming time:
32-byte write buffer reduces overall programming
time for multiple-byte updates
8-byte read page buffer
32-byte write buffer
I
Low power consumption (typical values at 3.0 V,
5 MHz)
30 mA typical active read current
50 mA typical erase/program current
1 μA typical standby mode current
I
Package options
48-pin TSOP
63-ball FBGA
SOFTWARE & HARDWARE FEATURES
I
Software features
Program Suspend & Resume: read other sectors
before programming operation is completed
Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
Data# polling & toggle bits provide status
Unlock Bypass Program command reduces overall
multiple-byte programming time
CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
I
Hardware features
Sector Group Protection: hardware method of
preventing write operations within a sector group
Temporary Sector Unprotect: V
ID
-level method of
changing code in locked sectors
ACC (high voltage) pin accelerates programming
time for higher throughput during system production
Hardware reset pin (RESET#) resets device
Ready/Busy# pin (RY/BY#) detects program or erase
cycle completion
相關PDF資料
PDF描述
AM29LV065MU101E 64 Megabit (8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
AM29LV065MU101EI 64 Megabit (8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
AM29LV065MU101F 64 Megabit (8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
AM29LV065MU101FI 64 Megabit (8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
AM29LV065MU101WH 64 Megabit (8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
相關代理商/技術參數
參數描述
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AM29LV081B-120ED 制造商:Spansion 功能描述:FLASH MEMORY IC
AM29LV081B-70EC 制造商:Advanced Micro Devices 功能描述: 制造商:Atmel Corporation 功能描述:
AM29LV081B-70ED 制造商:Spansion 功能描述:IC FLASH MEMORY PARALLEL 制造商:Advanced Micro Devices 功能描述:NOR Flash, 1M x 8, 40 Pin, Plastic, TSSOP
AM29LV081B-70ED 制造商:Spansion 功能描述:Flash Memory IC
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