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參數資料
| 型號： | AM29LV065MU90REI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 64 Megabit (8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
| 中文描述： | 8M X 8 FLASH 3V PROM, 90 ns, PDSO48 |
| 封裝： | TSOP-48 |
| 文件頁數： | 1/11頁 |
| 文件大小： | 499K |
| 代理商： | AM29LV065MU90REI |
ADVANCE INFORMATION
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
25262
Issue Date:
October 3, 2001
Rev:
A
Amendment/
+1
Refer to AMD’s Website (www.amd.com) for the latest information.
Am29LV065M
64 Megabit (8 M x 8-Bit) MirrorBit
3.0 Volt-only
Uniform Sector Flash Memory with VersatileI/O
Control
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
I
Single power supply operation
—
3 volt read, erase, and program operations
I
Enhanced VersatileI/O
control
—
Device generates data output voltages and tolerates
data input voltages as determined by the voltage on
the V
IO
pin; operates from 1.65 to 3.6 V
I
Manufactured on 0.23 μm MirrorBit process
technology
I
SecSi
(Secured Silicon) Sector region
—
256-byte sector for permanent, secure identification
through an 16-byte random Electronic Serial Number,
accessible through a command sequence
—
May be programmed and locked at the factory or by
the customer
I
Flexible sector architecture
—
One hundred twenty-eight 64 Kbyte sectors
I
Compatibility with JEDEC standards
—
Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
I
Minimum 100,000 erase cycle guarantee per sector
I
20-year data retention at 125
°
C
PERFORMANCE CHARACTERISTICS
I
High performance
—
90 ns access time
—
25 ns page read times
—
0.4 s typical sector erase time
—
3.0 μs typical write buffer byte programming time:
32-byte write buffer reduces overall programming
time for multiple-byte updates
—
8-byte read page buffer
—
32-byte write buffer
I
Low power consumption (typical values at 3.0 V,
5 MHz)
—
30 mA typical active read current
—
50 mA typical erase/program current
—
1 μA typical standby mode current
I
Package options
—
48-pin TSOP
—
63-ball FBGA
SOFTWARE & HARDWARE FEATURES
I
Software features
—
Program Suspend & Resume: read other sectors
before programming operation is completed
—
Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
—
Data# polling & toggle bits provide status
—
Unlock Bypass Program command reduces overall
multiple-byte programming time
—
CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
I
Hardware features
—
Sector Group Protection: hardware method of
preventing write operations within a sector group
—
Temporary Sector Unprotect: V
ID
-level method of
changing code in locked sectors
—
ACC (high voltage) pin accelerates programming
time for higher throughput during system production
—
Hardware reset pin (RESET#) resets device
—
Ready/Busy# pin (RY/BY#) detects program or erase
cycle completion
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AM29LV081B-120ED | 制造商:Spansion 功能描述:IC SM FLASH 3V 8MB |
| AM29LV081B-120ED | 制造商:Spansion 功能描述:FLASH MEMORY IC |
| AM29LV081B-70EC | 制造商:Advanced Micro Devices 功能描述: 制造商:Atmel Corporation 功能描述: |
| AM29LV081B-70ED | 制造商:Spansion 功能描述:IC FLASH MEMORY PARALLEL 制造商:Advanced Micro Devices 功能描述:NOR Flash, 1M x 8, 40 Pin, Plastic, TSSOP |
| AM29LV081B-70ED | 制造商:Spansion 功能描述:Flash Memory IC |
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