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參數資料
| 型號： | Am29LV081-90REE |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
| 中文描述： | 8兆位（1米× 8位）的CMOS 3.0伏特，只有統一部門閃存 |
| 文件頁數： | 1/35頁 |
| 文件大小： | 439K |
| 代理商： | AM29LV081-90REE |
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PRELIMINARY
Publication#
20977
Issue Date:
March 1998
Rev:
C
Amendment/
+1
Refer to AMD’s Website (www.amd.com) for the latest information.
Am29LV081
8 Megabit (1 M x 8-Bit)
CMOS 3.0 Volt-only Uniform Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
I
Optimized architecture for Miniature Card and
mass storage applications
I
Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
— Regulated voltage range: 3.0 to 3.6 volt read and
write operations and for compatibility with high
performance 3.3 volt microprocessors
I
High performance
— Full voltage range: access times as fast as 100
ns
— Regulated voltage range: access times as fast
as 90 ns
I
Ultra low power consumption (typical values at
5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 10 mA read current
— 20 mA program/erase current
I
Flexible sector architecture
— Sixteen 64 Kbyte sectors
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector (using
programming equipment) to prevent any
program or erase operations within that sector
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
I
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
I
Typical 1,000,000 write cycles per sector
(100,000 cycles minimum guaranteed)
I
Package option
— 40-pin TSOP
I
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
I
Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
I
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
I
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
I
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
相關PDF資料 |
PDF描述 |
|---|---|
| AM29LV081-90REI | 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
| AM29LV081-90RFC | Evaluation Board for LM3678 High-Performance, Miniature 1.5A Step-Down DC-DC Converter for Handheld Applications; ; Qty per Container: 1 |
| Am29LV081-90RFCB | 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
| Am29LV081-90RFE | 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
| Am29LV081-90RFEB | 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AM29LV081B-120ED | 制造商:Spansion 功能描述:IC SM FLASH 3V 8MB |
| AM29LV081B-120ED | 制造商:Spansion 功能描述:FLASH MEMORY IC |
| AM29LV081B-70EC | 制造商:Advanced Micro Devices 功能描述: 制造商:Atmel Corporation 功能描述: |
| AM29LV081B-70ED | 制造商:Spansion 功能描述:IC FLASH MEMORY PARALLEL 制造商:Advanced Micro Devices 功能描述:NOR Flash, 1M x 8, 40 Pin, Plastic, TSSOP |
| AM29LV081B-70ED | 制造商:Spansion 功能描述:Flash Memory IC |
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