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參數資料
| 型號： | AM29LV081B-120EE |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory |
| 中文描述： | 1M X 8 FLASH 3V PROM, 120 ns, PDSO40 |
| 封裝： | MO-142CD, TSOP-40 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 39K |
| 代理商： | AM29LV081B-120EE |
ADVANCE INFORMATION
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Refer to AMD’s Website (www.amd.com) for the latest information.
Publication#
21525
Issue Date:
January 1998
Rev:
A
Amendment/
0
Am29LV081B
8 Megabit (1 M x 8-Bit)
CMOS 3.0 Volt-only Sector Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
I
Optimized architecture for Miniature Card and
mass storage applications
I
Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
— Regulated voltage range: 3.0 to 3.6 volt read and
write operations and for compatibility with high
performance 3.3 volt microprocessors
I
Manufactured on 0.35
μ
m process technology
— Compatible with 0.5
μ
m Am29LV081 device
I
High performance
— Full voltage range: access times as fast as 80 ns
— Regulated voltage range: access times as fast
as 70 ns
I
Ultra low power consumption (typical values at
5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
— 15 mA program/erase current
I
Flexible sector architecture
— Sixteen 64 Kbyte sectors
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
I
Unlock Bypass Program Command
— Reduces overall programming time when
issuing multiple program command sequences
I
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
I
Minimum 1,000,000 write cycle guarantee per
sector
I
Package option
— 40-pin TSOP
I
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
I
Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
I
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
I
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
I
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
相關PDF資料 |
PDF描述 |
|---|---|
| Am29LV081B-120EEB | 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory |
| AM29LV081B-120EI | 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory |
| Am29LV081B-120EIB | 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory |
| AM29LV081B-120FC | 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory |
| Am29LV081B-120FCB | 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AM29LV081B-70EC | 制造商:Advanced Micro Devices 功能描述: 制造商:Atmel Corporation 功能描述: |
| AM29LV081B-70ED | 制造商:Spansion 功能描述:IC FLASH MEMORY PARALLEL 制造商:Advanced Micro Devices 功能描述:NOR Flash, 1M x 8, 40 Pin, Plastic, TSSOP |
| AM29LV081B-70ED | 制造商:Spansion 功能描述:Flash Memory IC |
| AM29LV081B-90EC | 制造商:ADV-MICRO-DEV 功能描述: |
| AM29LV081B-90ED | 制造商:Spansion 功能描述:Flash Memory IC 制造商:Advanced Micro Devices 功能描述:1M X 8 FLASH 3V PROM, 90 ns, PDSO40 |
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